Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications
O Maimon, Q Li - Materials, 2023 - mdpi.com
Power electronics are becoming increasingly more important, as electrical energy
constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly …
constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly …
High performance E-mode NiO/β-Ga2O3 HJ-FET with high conduction band offset and thin recessed channel
J Huang, W Chen, S Zhao, Q Yu, A Zhang, K Zhu… - Micro and …, 2024 - Elsevier
In this paper, an enhancement-mode (E-mode) NiO/β-Ga 2 O 3 heterojunction field-effect
transistor (HJ-FET) with high conduction band offset (ΔE C) and thin recessed channel is …
transistor (HJ-FET) with high conduction band offset (ΔE C) and thin recessed channel is …