Monolithic integration of a wafer-level thin-film encapsulated mm-wave RF-MEMS switch in BEOL of a 130-nm SiGe BiCMOS technology

A Göritz, ST Wipf, M Drost, M Lisker… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
One of the most significant challenges for the fabrication of any microelectro-mechanical-
system (MEMS) device is the low cost and high throughput packaging of the device to …

Capping technologies for wafer level MEMS packaging based on permanent and temporary wafer bonding

K Zoschke, M Wilke, M Wegner… - 2014 IEEE 64th …, 2014 - ieeexplore.ieee.org
This paper describes techniques for the miniaturized, low-cost wafer level chip-scale
packaging of MEMS based system in packages (SiPs). The approaches comprise …

Smarter ics

H Schumacher, M Kaynak, V Valenta… - IEEE Microwave …, 2012 - ieeexplore.ieee.org
This article presented the possibilities of making microwave and mm-wave ICs more
intelligent through a combination of established Si/SiGe BiCMOS technologies, which allow …

Overview of RF MEMS technology and applications

T Purtova, H Schumacher - Handbook of mems for wireless and mobile …, 2013 - Elsevier
This chapter presents an introduction to radio frequency microelectromechanical systems
(RF MEMS) technologies for wireless applications. It starts with reviewing the operation …

Temporary handling technology for advanced wafer level packaging applications based on adhesive bonding and laser assisted de-bonding

K Zoschke, T Fischer, H Oppermann… - 2014 IEEE 16th …, 2014 - ieeexplore.ieee.org
This manuscript describes process scenarios for advanced wafer level packaging which are
enabled by temporary bonding and de-bonding capabilities but exceeding the skills of …

Equivalent circuit model of reliable RF-MEMS switches for component synthesis, fabrication process characterization and failure analysis

NT Matabosch, F Coccetti, M Kaynak… - International Journal of …, 2014 - cambridge.org
An accurate and very large band (30–110 GHZ) lumped element equivalent circuit model of
capacitive RF-MEMS components based on a standard 250 nm BiCMOS technology is …

An accurate and versatile equivalent circuit model for RF-MEMS circuit optimization in BiCMOS technology

NT Matabosch, F Coccetti, M Kaynak… - 2012 7th European …, 2012 - ieeexplore.ieee.org
An accurate and very large band (30–110GHZ) lumped element equivalent circuit of
capacitive RF-MEMS components based on a standard 250nm BiCMOS technology is …

[PDF][PDF] RF-MEMS Switch Module in a 0.25 µm SiGe: C BiCMOS Process

M Kaynak - 2014 - depositonce.tu-berlin.de
Wireless communication technologies have continuously advanced for both performance
and frequency aspects, mainly for the frequencies up to 6 GHz. The results of Moore's law …

Estimation of RF performance from LF measurements: Towards the design for reliability in RF-MEMS

NT Matabosch, M Kaynak, F Coccetti… - Microelectronics …, 2012 - Elsevier
This paper presents a method which allows the prediction of the RF performance of
capacitive RF-MEMS by measuring the UP and DOWN state capacitances. The method is …

MM-wave RF-MEMS switches in SiGe BiCMOS technologies

S Tolunay Wipf - 2020 - depositonce.tu-berlin.de
In the last decade, silicon germanium (SiGe) bipolar complementary metal oxide
semiconductor (BiCMOS) technologies opened a new cost-efficient market for the mm-wave …