Planar Gunn diodes based on doped GaN active layers with different geometries have been
fabricated and characterized. Gunn oscillations have not been observed due to the …

We report on the modeling of self-heating in GaN-based devices. While a constant thermal
resistance is able to account for the self-heating effects at low power, the decrease of the …

This article presents a hybrid artificial intelligence (AI)-thermal model for the determination of
the current and lattice temperature of a device under a given bias voltage. The model is …

By means of Monte Carlo simulations of gallium nitride (GaN) planar Gunn diodes, the
epilayer structure on which they are fabricated is optimized in order to achieve ultrahigh …

The existence of leakage current pathways leading to the appearance of impact ionization
and the potential device breakdown in planar Gunn GaN diodes is analyzed by means of a …

An investigation into self-switching diodes based on highly doped GaN is conducted under
direct current (dc) bias conditions. Different device geometries are explored under various …

A novel planar design of Gunn diode with a shaped anode contact, utilizing Monte Carlo
simulations, has been shown to have produced 0.3 THz frequency current output when …