A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Atomic switch: atom/ion movement controlled devices for beyond Von‐Neumann computers

T Hasegawa, K Terabe, T Tsuruoka… - Advanced …, 2012 - Wiley Online Library
An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and
their reduction/oxidation processes in the switching operation to form/annihilate a …

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

A Wedig, M Luebben, DY Cho, M Moors, K Skaja… - Nature …, 2016 - nature.com
A detailed understanding of the resistive switching mechanisms that operate in redox-based
resistive random-access memories (ReRAM) is key to controlling these memristive devices …

In Situ Electrochemical Oxidation of Cu2S into CuO Nanowires as a Durable and Efficient Electrocatalyst for Oxygen Evolution Reaction

Y Zuo, Y Liu, J Li, R Du, X Han, T Zhang… - Chemistry of …, 2019 - ACS Publications
Development of cost-effective oxygen evolution catalysts is of capital importance for the
deployment of large-scale energy-storage systems based on metal–air batteries and …

Physics of the switching kinetics in resistive memories

S Menzel, U Böttger, M Wimmer… - Advanced functional …, 2015 - Wiley Online Library
Memristive cells based on different physical effects, that is, phase change, valence change,
and electrochemical processes, are discussed with respect to their potential to overcome the …

Mechanical control of nanomaterials and nanosystems

K Ariga, T Mori, JP Hill - Advanced materials, 2012 - Wiley Online Library
In situations of power outage or shortage, such as periods just following a seismic disaster,
the only reliable power source available is the most fundamental of forces ie, manual …

Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells

N Onofrio, D Guzman, A Strachan - Nature materials, 2015 - nature.com
Nanoscale resistance-switching cells that operate via the electrochemical formation and
disruption of metallic filaments that bridge two electrodes are among the most promising …

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

I Valov, I Sapezanskaia, A Nayak, T Tsuruoka… - Nature materials, 2012 - nature.com
Electrochemical equilibrium and the transfer of mass and charge through interfaces at the
atomic scale are of fundamental importance for the microscopic understanding of …

Conduction mechanisms, dynamics and stability in ReRAMs

C Wang, H Wu, B Gao, T Zhang, Y Yang… - Microelectronic …, 2018 - Elsevier
Though resistive random access memory (ReRAM), a promising emerging memory
technology, has achieved remarkable progress in technology development in recent years …

Cation-based resistance change memory

I Valov, MN Kozicki - Journal of Physics D: Applied Physics, 2013 - iopscience.iop.org
A potential replacement for current charge-based memory technologies in the nanoscale
device regime is a form of resistance change memory (RRAM) which utilizes cation transport …