Recent advances and future prospects for memristive materials, devices, and systems

MK Song, JH Kang, X Zhang, W Ji, A Ascoli… - ACS …, 2023 - ACS Publications
Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide …

Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era

J Li, H Abbas, DS Ang, A Ali, X Ju - Nanoscale horizons, 2023 - pubs.rsc.org
Growth of data eases the way to access the world but requires increasing amounts of energy
to store and process. Neuromorphic electronics has emerged in the last decade, inspired by …

Implementation of convolutional neural networks in memristor crossbar arrays with binary activation and weight quantization

J Park, S Kim, MS Song, S Youn, K Kim… - … applied materials & …, 2024 - ACS Publications
We propose a hardware-friendly architecture of a convolutional neural network using a 32×
32 memristor crossbar array having an overshoot suppression layer. The gradual switching …

[HTML][HTML] Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge

J Park, A Kumar, Y Zhou, S Oh, JH Kim, Y Shi… - Nature …, 2024 - nature.com
CMOS-RRAM integration holds great promise for low energy and high throughput
neuromorphic computing. However, most RRAM technologies relying on filamentary …

Reliable Memristive Synapses Based on Parylene-MoOx Nanocomposites for Neuromorphic Applications

A Minnekhanov, A Matsukatova… - … Applied Materials & …, 2023 - ACS Publications
Memristive devices, known for their nonvolatile resistive switching, are promising
components for next-generation neuromorphic computing systems, which mimic the brain's …

Memristive Architectures Exploiting Self-Compliance Multilevel Implementation on 1 kb Crossbar Arrays for Online and Offline Learning Neuromorphic Applications

S Kim, H Ji, K Park, H So, H Kim, S Kim, WY Choi - ACS nano, 2024 - ACS Publications
This paper suggests the practical implications of utilizing a high-density crossbar array with
self-compliance (SC) at the conductive filament (CF) formation stage. By limiting the …

Stacked NbOx-based selector and ZrOx-based resistive memory for high-density crossbar array applications

Y Cho, J Heo, S Kim, S Kim - Surfaces and Interfaces, 2023 - Elsevier
Resistive random-access memory (RRAM) is a promising candidate for next-generation
nonvolatile memory (NVM). Furthermore, RRAM is highly suitable for integration as a …

Optimization of random telegraph noise characteristics in memristor for true random number generator

MS Song, TH Kim, H Hwang, S Ahn… - Advanced Intelligent …, 2023 - Wiley Online Library
Memristor devices can be utilized for various computing applications, and stochastic
computing is one of them. The intrinsic stochastic characteristics of the memristor cause …

Memory and synaptic devices based on emerging 2D ferroelectricity

Y Joo, E Hwang, H Hong, S Cho… - Advanced Electronic …, 2023 - Wiley Online Library
Memory devices are an essential part of modern electronics. Efforts to move beyond the
traditional “read” and “write” of digital information in volatile and non‐volatile memory …

Low-fluctuation nonlinear model using incremental step pulse programming with memristive devices

GH Lee, TH Kim, S Youn, J Park, S Kim, H Kim - Chaos, Solitons & Fractals, 2023 - Elsevier
On-chip learning in neuromorphic systems, wherein both training and inference are
performed on memristive synaptic devices, has been actively studied recently. However, on …