Oxide-based filamentary RRAM for deep learning
We provide an overview of the field of oxide-based filamentary resistive random access
memory (RRAM) for deep learning neural networks (DNNs). After introducing the electrical …
memory (RRAM) for deep learning neural networks (DNNs). After introducing the electrical …
Bi2O2Se-Based True Random Number Generator for Security Applications
The fast development of the Internet of things (IoT) promises to deliver convenience to
human life. However, a huge amount of the data is constantly generated, transmitted …
human life. However, a huge amount of the data is constantly generated, transmitted …
Reliability aspects of binary vector-matrix-multiplications using ReRAM devices
Computation-in-memory using memristive devices is a promising approach to overcome the
performance limitations of conventional computing architectures introduced by the von …
performance limitations of conventional computing architectures introduced by the von …
HRS instability in oxide-based bipolar resistive switching cells
S Wiefels, C Bengel, N Kopperberg… - … on Electron Devices, 2020 - ieeexplore.ieee.org
One of the key challenges in the reliability of valence change [valence change-based
memory (VCM)] resistive switching random access memories (ReRAMs) is the short-term …
memory (VCM)] resistive switching random access memories (ReRAMs) is the short-term …
Memristive true random number generator with intrinsic two-dimensional physical unclonable function
B Liu, J Ma, HH Tai, D Verma, M Sahoo… - ACS Applied …, 2023 - ACS Publications
The development of physical-level primitives for cryptographic applications has emerged as
a trend in the electronic community, while the methods for protecting the generators from …
a trend in the electronic community, while the methods for protecting the generators from …
Improvement of state stability in multi-level resistive random-access memory (RRAM) array for neuromorphic computing
In this work, a new operation scheme is developed to improve the state stability of multi-level
resistive random-access memory (RRAM) array. We found that the state instability after …
resistive random-access memory (RRAM) array. We found that the state instability after …
Design of power-and variability-aware nonvolatile RRAM cell using memristor as a memory element
A 3 CNFETs and 2 memristors-based half-select disturbance free 3T2R resistive RAM
(RRAM) cell is proposed in this paper. While the two memristors act as the nonvolatile …
(RRAM) cell is proposed in this paper. While the two memristors act as the nonvolatile …
[HTML][HTML] Effect of electron conduction on the read noise characteristics in ReRAM devices
K Schnieders, C Funck, F Cüppers, S Aussen… - APL Materials, 2022 - pubs.aip.org
The read variability of redox based resistive random access memory is one of the key
characteristics with regard to its application in both data storage and novel computation in …
characteristics with regard to its application in both data storage and novel computation in …
Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices
Y Li, X Li, L Fu, R Chen, H Wang… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
An intentionally introduced interface layer in the resistive random-access memory (RRAM)
devices play an important role in the improvement of resistive switching characteristics. In …
devices play an important role in the improvement of resistive switching characteristics. In …
All nonmetal resistive random access memory
TJ Yen, A Gismatulin, V Volodin, V Gritsenko, A Chin - Scientific reports, 2019 - nature.com
Abstract Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal
(MIM) structure, in which metal oxide is usually used as an insulator. The charge transport …
(MIM) structure, in which metal oxide is usually used as an insulator. The charge transport …