Amorphous oxide semiconductors: From fundamental properties to practical applications
Amorphous oxide semiconductors (AOSs) have exceptional features of high visible
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses
We present comprehensive studies on ZnON thin films deposited by radio-frequency (RF)
magnetron sputtering using a ZnO target under various nitrogen plasma conditions. A ZnON …
magnetron sputtering using a ZnO target under various nitrogen plasma conditions. A ZnON …
Influence of the Electron Transport Layer on the Performance of Perovskite Solar Cells under Low Illuminance Conditions
T Asada, I Raifuku, F Murata, K Hayashi… - ACS …, 2024 - ACS Publications
Owing to the tunable band gap of metal-halide perovskite compounds, perovskite solar cells
(PSCs) are promising energy-harvesting devices for indoor applications. Since the electron …
(PSCs) are promising energy-harvesting devices for indoor applications. Since the electron …
XANES Studies of Zinc Tin Oxide Films Deposited by Atomic Layer Deposition: Revealing Process-Structure Relationships for Amorphous Oxide Semiconductors
Amorphous oxide semiconductors have grown in technological relevance in displays,
information technology, energy, and catalysis. Recent research efforts have converged on …
information technology, energy, and catalysis. Recent research efforts have converged on …
Ultrawide bandgap high near ultraviolet transparency amorphous Sn–Al co-doped ZnO thin films
H Guendouz, A Bouaine, N Brihi - Journal of Non-Crystalline Solids, 2021 - Elsevier
Abstract Transparent amorphous Sn–Al co-doped ZnO thin films (a-SAZO) were prepared by
sol-gel spin-coating technique. Sn was inserted with a constant concentration of 2 at.%, and …
sol-gel spin-coating technique. Sn was inserted with a constant concentration of 2 at.%, and …
Study of the Influence of Ga and In Doping on Organic Residuals in Solution-Processed IGZO Thin Films Deposited at Low-Temperature
S Ceron, O Obregon, A Orduña-Diaz… - … on Electrical and …, 2022 - Springer
In this work, the synthesis and characterization of IGZO films was carried out from the
individual analysis of ZnO films doped at different In3+ and Ga3+ wt.%. The thin films were …
individual analysis of ZnO films doped at different In3+ and Ga3+ wt.%. The thin films were …
Transport mechanism in amorphous molybdenum silicide thin films
Z Liu, B Luo, J Hu, C Xing - Journal of Physics and Chemistry of Solids, 2021 - Elsevier
Amorphous molybdenum silicide compounds have attracted significant interest because of
their potential applications in devices, particularly single-photon detectors. In this study, we …
their potential applications in devices, particularly single-photon detectors. In this study, we …
Flexible, Low-Voltage, Metal Oxide Thin Film Transistors (TFT) and Circuits for Wearables and Internet of Things (IoT)
S Bhalerao - 2021 - trepo.tuni.fi
Multifunctional flexible electronics are booming in many ways. Flexible electronics have
opened up a world of possibilities for their widespread use in smart electronics such as …
opened up a world of possibilities for their widespread use in smart electronics such as …