Experimental study on carrier transport properties in extremely-thin body Ge-on-insulator (GOI) p-MOSFETs with GOI thickness down to 2 nm
X Yu, J Kang, M Takenaka… - 2015 IEEE International …, 2015 - ieeexplore.ieee.org
In this paper, we have successfully demonstrated high quality Extremely-thin body (ETB) Ge-
on-insulator (GOI) p-MOSFETs with thickness ranging from 25 nm to 2 nm. Furthermore, the …
on-insulator (GOI) p-MOSFETs with thickness ranging from 25 nm to 2 nm. Furthermore, the …
Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method
We study the impact of the SiGe thickness in starting substrates composed of Si/Si 0.25 Ge
0.75/SOI (100) structures for the Ge condensation process on the resulting Ge-on-insulator …
0.75/SOI (100) structures for the Ge condensation process on the resulting Ge-on-insulator …
Advanced germanium layer transfer for ultra thin body on insulator structure
We present the HEtero-Layer Lift-Off (HELLO) technique to obtain ultra thin body (UTB) Ge
on insulator (GeOI) substrates. The transferred ultra thin Ge layers are characterized by the …
on insulator (GeOI) substrates. The transferred ultra thin Ge layers are characterized by the …
Infrared detector based on crystal ion sliced LiNbO3 single-crystal film with BCB bonding and thermal insulating layer
W Luo, J Luo, Y Shuai, K Zhang, T Wang, C Wu… - Microelectronic …, 2019 - Elsevier
In this study, LiNbO 3 (LNO) thin films prepared by crystal ion slicing (CIS) technology have
been used to fabricate pyroelectric infrared detectors. Crack free LNO film with single crystal …
been used to fabricate pyroelectric infrared detectors. Crack free LNO film with single crystal …
Characterization of ultrathin-body Germanium-on-insulator (GeOI) structures and MOSFETs on flipped Smart-Cut™ GeOI substrates
A novel way to realize UTB GeOI substrates, where the high quality surface layers of Smart-
Cut™ GeOI is utilized for UTB structure through a layer transfer technology by direct wafer …
Cut™ GeOI is utilized for UTB structure through a layer transfer technology by direct wafer …
First experimental observation of channel thickness scaling induced electron mobility enhancement in UTB-GeOI nMOSFETs
WH Chang, T Irisawa, H Ishii, H Hattori… - … on Electron Devices, 2017 - ieeexplore.ieee.org
High quality ultrathin body (UTB)-Ge-on-insulator (GeOI) substrates have been fabricated
with advanced layer transfer technology called HEtero-Layer-Lift-Off. With precise control of …
with advanced layer transfer technology called HEtero-Layer-Lift-Off. With precise control of …
Hole mobility in the ultra-thin-body junctionless germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistors
Y Li, R Zhang - Applied Physics Letters, 2019 - pubs.aip.org
Junctionless Germanium-on-insulator (GOI) p-channel metal-oxide-semiconductor field-
effect transistors (MOSFETs) have been realized with an ultra-thin-body (UTB) channel of …
effect transistors (MOSFETs) have been realized with an ultra-thin-body (UTB) channel of …
Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3 gate dielectrics
Remote Coulomb scattering (RCS) on electron mobility degradation is investigated
experimentally in Ge-based metal–oxide–semiconductor field-effect-transistors (MOSFETs) …
experimentally in Ge-based metal–oxide–semiconductor field-effect-transistors (MOSFETs) …
Enhancement of mobility in ultra-thin-body GeOI p-channel metal–oxide–semiconductor field effect transistors with Si-passivated back interfaces
WH Chang, T Irisawa, H Ishii, H Hattori… - Applied Physics …, 2016 - iopscience.iop.org
Abstract Ultra-thin-body (UTB) germanium-on-insulator (GeOI) substrates with Si-passivated
back interfaces have been fabricated by using advanced epitaxial-lift-off (ELO) technology …
back interfaces have been fabricated by using advanced epitaxial-lift-off (ELO) technology …
Impact of low-temperature and low-pressure mild oxidation after plasma solidification on electrical properties and reliability in ultra-thin SiON MOSFETs
Q Teng, Y Wu, K Xu, D Gao - Microelectronic Engineering, 2024 - Elsevier
The impact of different SiON manufacturing processes on performance and reliability
behaviors has been investigated for the MOSFETs. The performance of devices composed …
behaviors has been investigated for the MOSFETs. The performance of devices composed …