Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …

Non-and semipolar GaN-based optoelectronic device structures have attracted much
attention in recent years. Best results have been obtained on small bulk substrates cut from …

III-nitride wide bandgap semiconductors are promising materials for modern optoelectronics
and electronics. Their application has progressed greatly thanks to the continuous quality …

Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

We report the growth and characterization of core/multishell nanowire radial
heterostructures, and their implementation as efficient and synthetically tunable multicolor …

In recent years, GaN nanorods are emerging as a very promising novel route toward devices
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …

We report a new and general strategy for efficient injection of carriers in active nanophotonic
devices involving the synthesis of well-defined doped core/shell/shell (CSS) nanowire …

The use of micro‐Raman spectroscopy to monitor non‐invasively GaN, AlGaN and AlN
material parameters for process and growth monitoring/control is demonstrated. Concepts to …

It is a big challenge to grow β-Ga 2 O 3 films of good p-type conductivity and stability due to
the large acceptor ionization energy, strong hole-trapping effect, low hole mobility, and self …

We succeeded in preparing very thick c-plane bulk gallium nitride (GaN) crystals grown by
hydride vapor phase epitaxy. Growth of the bulk GaN crystals was performed on templates …