This paper reviews some of the key doping strategies pursued for scaled finFET devices
fabrication, addressing several of the critical integration challenges faced by this device …

Two assumptions lead to a correlation between the leakage mechanism of a dielectric and
dielectric reliability: the degradation of the dielectric is a direct cause of the leakage current …

We studied the impact of grain boundary (GB) protrusion on the electrical properties of low
temperature polycrystalline silicon thin film transistors. The analysis of atomic force …

Hydrogenated amorphous silicon (a-Si: H/a-Si: H) stacked tandem solar cells have received
considerable attention in the last few years because they are more robust to light soaking …

This paper critically examines the leakage current reduction techniques for improving the
performance of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) used in active …

A charge transport mechanism in double oxide-nitride dielectric was studied experimentally
and theoretically. We have found that widely accepted Frenkel effect or thermally assisted …

The degradation phenomena in polycrystalline-silicon thin film transistors fabricated by a
low-temperature process below 425 C (low-temperature-processed poly-Si TFTs) have been …

This paper critically reviews the different mechanisms impacting the current-voltage and
capacitance voltage characteristics of complementary metal oxide semiconductor (CMOS) …

One-transistor floating-body random access memory retention time distribution is
investigated on silicon-on-insulator UTBOX devices. It is shown that the average retention …

Based on a generation-recombination model including the Poole-Frenkel (PF) effect and
phonon-assisted tunneling, numerical analysis shows that the logarithm of generation rate …