Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices
Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …
properties of electrical conductivity and optical transparency. They are being widely used as …
Recent progress on the electronic structure, defect, and doping properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors
In this work, we demonstrate enhancement-mode field-effect transistors by an atomic-layer-
deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is …
deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is …
Printed electronics based on inorganic semiconductors: From processes and materials to devices
Following the ever‐expanding technological demands, printed electronics has shown
palpable potential to create new and commercially viable technologies that will benefit from …
palpable potential to create new and commercially viable technologies that will benefit from …
Indium oxide—a transparent, wide-band gap semiconductor for (opto) electronic applications
O Bierwagen - Semiconductor Science and Technology, 2015 - iopscience.iop.org
The present review takes a semiconductor physics perspective to summarize the state-of-the
art of In 2 O 3 in relation to applications. After discussing conventional and novel …
art of In 2 O 3 in relation to applications. After discussing conventional and novel …
Group‐III sesquioxides: growth, physical properties and devices
H Von Wenckstern - Advanced Electronic Materials, 2017 - Wiley Online Library
The group‐III sesquioxides possess material properties that render them interesting for
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …
extremely thin amorphous indium oxide transistors
Amorphous oxide semiconductor transistors have been a mature technology in display
panels for upward of a decade, and have recently been considered as promising back‐end …
panels for upward of a decade, and have recently been considered as promising back‐end …
Creation and control of a two-dimensional electron liquid at the bare SrTiO3 surface
Many-body interactions in transition-metal oxides give rise to a wide range of functional
properties, such as high-temperature superconductivity, colossal magnetoresistance or …
properties, such as high-temperature superconductivity, colossal magnetoresistance or …
Experimental electronic structure of In2O3 and Ga2O3
C Janowitz, V Scherer, M Mohamed, A Krapf… - New Journal of …, 2011 - iopscience.iop.org
Transparent conducting oxides (TCOs) pose a number of serious challenges. In addition to
the pursuit of high-quality single crystals and thin films, their application has to be preceded …
the pursuit of high-quality single crystals and thin films, their application has to be preceded …
Large Tunable Rashba Spin Splitting of a Two-Dimensional Electron Gas in
We report a Rashba spin splitting of a two-dimensional electron gas in the topological
insulator Bi 2 Se 3 from angle-resolved photoemission spectroscopy. We further …
insulator Bi 2 Se 3 from angle-resolved photoemission spectroscopy. We further …