Integrated circuit (IC) technology has grown tremendously over the last few decades. The
prime goal has been to achieve low-power and high-performance in logic and memory …

A physically based compact analytical single electron transistor (SET) model is proposed for
hybrid CMOS-SET analog circuit simulation. The modeling approach is based on the" …

This paper presents a new exact analytical model for single electron transistor (SET)
applicable for circuit simulation. It has been developed based on orthodox theory of single …

Hybrid simulation was performed to analyze the response of the real-time reflection-type
radio frequency single-electron transistor (RF-SET) measurement system. A compact and …

A compact analytical single electron transistor (SET) model is proposed. This model is
based on the “orthodox theory” of single electron tunneling, valid for unlimited range of drain …

The urge of inventing a new low power consuming device for the post CMOS future
technology has drawn the attention of the researchers on Single Electron Transistor [SET] …

The rapid advancement of integrated circuit (IC) technology in the recent decades paved the
path for miniaturization of electronic devices. Nowadays all the handheld devices are battery …

quotThe VLSI technology has seamlessly grown over the years, that yields high-
performance, low-power and high-density devices. Over the several decades, the …

On one side, the steady downscaling that CMOS technology has experienced in the last four
decades has brought it near its fundamental limits due to the appearance of quantum effects …

A simple compact model was proposed to simulate the drain current characteristic for single
electron transistor at high temperature, it takes into account all contributions mechanisms; …