SrTiO 3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the
route to the monolithic integration of various complex oxides on the complementary metal …

Chemical Vapour Deposition (CVD) involves the deposition of thin solid films from chemical
precursors in the vapour phase, and encompasses a variety of deposition techniques …

The challenges of reducing gate leakage current and dielectric breakdown beyond the 45
nm technology node have shifted engineers' attention from the traditional and proven …

Oxides form a class of material, which covers almost all the spectra of functionalities:
dielectric, semiconductor, metallic, superconductor, optically nonlinear, piezoelectric …

Neuromorphic computing has recently emerged as a potential alternative to the
conventional von Neumann computer paradigm, which is inherently limited due to its …

Valence change memories, in which internal redox reactions control the change in
resistance are promising candidates for resistive random access memories (ReRAMs) and …

The next generation of electronic devices requires faster operation velocity, higher storage
capacity and reduction of the power consumption. In this context, resistive switching memory …

By a direct-liquid-evaporation chemical vapor deposition (DLE-CVD) method, we deposited
smooth low-resistance cobalt (Co) and cobalt nitride (CoxN) thin films with excellent …

A new successful strategy is developed for the production of Ni, Cu, and Co films using
commercially available metal acetylacetonates as precursors. Pulsed spray evaporation …

The cubic phase of Hf O 2 was stabilized by addition of yttrium in thin films grown on Si∕ Si
O 2 by metal-organic chemical vapor deposition. The cubic phase was obtained for contents …