Three self-assembled nanogranular composites based on MnAs ferromagnetic inclusions
embedded in ZnSnAs 2 semiconductors with MnAs concentration 10, 20, 47 mol.% were …

IV-VI materials doping with magnetic impurities presents exciting opportunities for spintronic
applications particularly by incorporating the memory component in the semiconducting …

An unusual change in the hysteresis direction is believed as rare phenomenon associated
with perovskite-type structure. Such'anomalous' magnetization hysteresis could possess a …

A strong influence of the lattice degree of freedom on magnetoresistance (MR) under high
pressure underlies the conception of'structure-driven'magnetoresistance (SDMR). In most …

We present studies of structural, magnetic, and electrical properties of Zn 1-xy Cd x Mn y
GeAs 2 nanocomposite ferromagnetic semiconductor samples with changeable chemical …

Mn-doped chalcopyrites exhibit rich and unique physical properties due to the presence of
magnetic clusters, both at ambient and under high external pressures. Despite recent efforts …

We present the studies of structural, transport and magnetotransport properties of $\text
{Z}{{\text {n}} _ {1-x}} $ Cd x GeAs 2 crystals with the chemical content changing from 0 to 1 …

We present studies of structural, magnetic, and electrical properties of Zn 1− x Mn x SnSb 2+
MnSb nanocomposite ferromagnetic semiconductors with the average Mn-content, $\bar {x} …

Magnetic nanocomposites based on MnAs clusters embedded in a chalcopyrite host usually
do not exhibit large magnetoresistance (MR) at room temperature, while pronounced effects …

Chalcopyrite compounds are extensively explored for their exotic topological phases and
associated phenomena in a variety of experiments. Here, we discuss the electrical transport …