Ferroelectrics and multiferroics have recently emerged as perspective materials for
information technology and data storage applications. The combination of extremely narrow …

Recent developments in ferroelectric (FE) domain imaging techniques have established an
understanding of intriguing polarization switching dynamics. In particular, nanoscale studies …

The mechanism of the remnant polarization (P r) growth during the first stage of ferroelectric
HfO2-based memory cell operation (the wake-up effect) is still unclear. In this work, we …

Piezoresponse force microscopy (PFM) is a powerful characterization technique to readily
image and manipulate the ferroelectric domains. PFM gives an insight into the strength of …

Abstract Multiferroic BiFeO 3/Bi 4 Ti 3 O 12 bilayer films were prepared using chemical
solution deposition. Well-defined interfaces between BiFeO 3 and Bi 4 Ti 3 O 12 layers and …

Lead-free K 0.5 Na 0.5 NbO 3/BiMnO 3 solid-solution films were deposited on Pt/Ti/SiO 2/Si
substrates by solution-gelation methods. The effects of the BiMnO 3 addition on the electric …

Nanoscale polarisation switching and leakage currents in (Ba0.955Ca0.045)(Zr0.17Ti0.83)O3
epitaxial thin films - IOPscience Skip to content IOP Science home Accessibility Help Search …

A giant negative electrocaloric effect is found in lead-free BiFeO 3/Bi 4 Ti 3 O 12 composite
films with ΔT=− 5.717 K under a relatively suitable working applied field of ΔE= 305 kV/cm …

We report the electrical properties, measured both at the macroscopic and nanometric
scales, of epitaxial (110)-Na 0.5 Bi 0.5 TiO 3 (NBT) thin films grown on (110) Pt/(110) SrTiO 3 …

Lead-free Bi0. 5 (Na0. 85K0. 15) 0.5 TiO3 films have been prepared via a solution-gelation
technique. The microstructure, domain structure, ferroelectric, fatigue and piezoelectric …