GaN power integration technology and its future prospects
The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …
implementing monolithic power integrated circuits. This article presents a comprehensive …
N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates
Recent observation of high density polarization-induced two-dimensional electron gases in
ultra-thin N-polar GaN layers grown on single-crystal AlN has enabled the development of N …
ultra-thin N-polar GaN layers grown on single-crystal AlN has enabled the development of N …
Correlation between electrical performance and gate width of GaN-based HEMTs
In this work, we comprehensively studied the correlation between the electrical
characteristics and the gate width () of GaN-based HEMTs. On the one hand, as is scaled …
characteristics and the gate width () of GaN-based HEMTs. On the one hand, as is scaled …
Special topic on Wide-and ultrawide-bandgap electronic semiconductor devices
J Würfl, T Palacios, HG Xing, Y Hao… - Applied Physics …, 2024 - pubs.aip.org
Despite the tremendous progress on wide-bandgap materials in the last few decades,
devices made of these materials are still far from their maximum theoretical performance …
devices made of these materials are still far from their maximum theoretical performance …
Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations
H Su, T Zhang, S Xu, J Lu, H Du, H Tao… - Applied Physics …, 2022 - pubs.aip.org
In this paper, an excellent Ohmic contact to p-GaN with a low specific contact resistance (ρ c)
of 2.0× 10− 5 Ω· cm 2 is demonstrated using a patterned sapphire substrate (PSS) and …
of 2.0× 10− 5 Ω· cm 2 is demonstrated using a patterned sapphire substrate (PSS) and …
[HTML][HTML] Polarization-induced 2D electron gases in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates
Polarization-induced carriers play an important role in achieving high electrical conductivity
in ultrawide bandgap semiconductor AlGaN, which is essential for various applications …
in ultrawide bandgap semiconductor AlGaN, which is essential for various applications …
Enhanced Wall‐Plug Efficiency over 2.4% and Wavelength Dependence of Electrical Properties at Far UV‐C Light‐Emitting Diodes on Single‐Crystal AlN Substrate
H Kobayashi, K Sato, Y Okuaki, TG Lee… - physica status solidi …, 2024 - Wiley Online Library
Herein, the wavelength dependence of the efficiency and the lifetime of far UV‐C light‐
emitting diodes (LEDs) on a single‐crystal AlN substrate is systematically analyzed from …
emitting diodes (LEDs) on a single‐crystal AlN substrate is systematically analyzed from …
High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping
Polarization-induced two-dimensional electron gases (2DEGs) in AlN/GaN/AlN quantum
well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising …
well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising …
Very High Density (>1014 cm−2) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures
High hole densities are desired in p‐channel field effect transistors to improve the speed
and on‐currents. Building on the recently discovered undoped, polarization‐induced …
and on‐currents. Building on the recently discovered undoped, polarization‐induced …
[HTML][HTML] High-density 2D hole gas in P-GaN/AlN/AlGaN on a silicon substrate with polarization-enhanced Mg ionization
T Zhang, H Su, J Zhu, H Du, J Ning, Y Lv, S Xu… - Fundamental …, 2023 - Elsevier
Improving the hole concentration in p-GaN specimens has posed a major challenge due to
the high activation energy of Mg doping in GaN. Recently, a delta doping technique for …
the high activation energy of Mg doping in GaN. Recently, a delta doping technique for …