The phonon and plasmon excitations and electronic properties of interfaces of periodic W/Si
and Si/W multilayer structures were investigated. The Boson band originated from quasilocal …

The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on
Si 29/Si nat heterostructures using neutron reflectometry and secondary ion mass …

Microstructural investigation of the Mo/Si nanoscale multilayers (MLs) is essential to design
high-reflective nanomirrors. Raman spectroscopy showed existence of silicon layer in the …

Structural and dynamical properties of amorphous silicon-germanium (a− Si 1− x Ge x)
alloys have been examined by molecular dynamics simulations using the Tersoff interatomic …

We present the first molecular dynamics simulation of the vacuum deposition of amorphous
selenium films. We compare the classical, tight-binding and Hubbard-term corrected tight …

An analysis of the bonding structure of nine different amorphous carbon-nitrogen alloys, aC
1− x N x, of concentrations 0⩽ x⩽ 0.45, is performed on ab initio generated atomic random …

The tight-binding molecular dynamics simulations and reverse Monte Carlo structural
modeling method were applied in order to investigate the existence of small bond angles …

The existence of small bond angles (like those of triangles and squares) in amorphous
silicon networks were studied by the tight-binding molecular dynamics method, by analyzing …

Experiments on self-diffusion in amorphous silicon between 400 and 500 C are presented,
which were carried out by neutron reflectometry in combination with 29 Si/nat Si isotope …

Non-crystalline silicon networks were constructed by atomic deposition and by rapid
quenching. The tight-binding molecular dynamics (TBMD) method which had been …