Polarization-dependent hole generation in 222 nm-band AlGaN-based Far-UVC LED: a way forward to the epi-growers of MBE and MOCVD
Far-ultraviolet-C (Far-UVC) light-emitting-diodes (LEDs) offer a promising technology for the
disinfection of surface, air, water, food and airborne disease transmission in occupied …
disinfection of surface, air, water, food and airborne disease transmission in occupied …
Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes
V-defects are morphological defects that typically form on threading dislocations during
epitaxial growth of (0001)-oriented GaN layers. A V-defect is a hexagonal pyramid-shaped …
epitaxial growth of (0001)-oriented GaN layers. A V-defect is a hexagonal pyramid-shaped …
A Review of Recent Research Advances on AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
Y Huang, Y Li, D Xiang - IEEE Access, 2023 - ieeexplore.ieee.org
Due to environmental friendliness, small size, long lifetime, and adjustable light-emitting
wavelength, AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) have great …
wavelength, AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) have great …
[HTML][HTML] Deep removal impurities in the process of preparing high-purity magnesium by vacuum gasification
D Liang, L Wang, T Ma, R Yu, Y Tian, B Xu… - Journal of Magnesium …, 2024 - Elsevier
Magnesium (Mg), as one of the most abundant elements in earth's crust, is the lightest
structural metal with extensive applications across various industries. However, the …
structural metal with extensive applications across various industries. However, the …
-type ionization level lowering in ultrawide bandgap digital alloys
X Wang, J Zhu, W Shang, S Xu, L Fu, J Zhang, Y Hao - Physical Review B, 2024 - APS
Efficient p-type doping is essential and challenging for applications of ultra-wide-bandgap
AlGaN with a high aluminum content. Although the band-edge-assisted ionization enabled …
AlGaN with a high aluminum content. Although the band-edge-assisted ionization enabled …
[HTML][HTML] Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation
This work reports on the possibility of sustaining a stable operation of polarization-doped
InGaN light emitters over a particularly broad temperature range. We obtained efficient …
InGaN light emitters over a particularly broad temperature range. We obtained efficient …
Growth of uniform Mg-doped p-AlGaN nanowires using plasma-assisted molecular beam epitaxy technique for UV-A emitters
In this manuscript, we have shown the growth and extensive structural and optical
characteristic of the uniformly Mg-doped Al 0.23 Ga 0.77 N (UV-A region, λ∼ 323 nm) …
characteristic of the uniformly Mg-doped Al 0.23 Ga 0.77 N (UV-A region, λ∼ 323 nm) …
[HTML][HTML] Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions
AM Dominic Merwin Xavier, A Ghosh… - Applied Physics …, 2023 - pubs.aip.org
Ultra-violet (UV) light emitting diodes operating at 339 nm using transparent interband
tunnel junctions are reported. Tunneling-based ultraviolet light emitting diodes were grown …
tunnel junctions are reported. Tunneling-based ultraviolet light emitting diodes were grown …
[HTML][HTML] AlGaN 基宽禁带半导体光电材料与器件
贲建伟， 孙晓娟， 蒋科， 陈洋， 石芝铭… - Journal of Synthetic …, 2020 - opticsjournal.net
摘要AlGaN 基材料是带隙可调的直接带隙宽禁带半导体材料, 是制备紫外(UV)
光电子器件的理想材料. 经过数十年的研究, 目前已经在异质衬底外延生长AlGaN 基材料 …
光电子器件的理想材料. 经过数十年的研究, 目前已经在异质衬底外延生长AlGaN 基材料 …
[PDF][PDF] 氮化铝镓基深紫外发光二极管的研究进展
李煜， 黄涌， 李渊， 江浩 - Laser & Optoelectronics Progress, 2024 - researching.cn
摘要目前的氮化铝镓(AlGaN) 基深紫外发光二极管(LED) 与已全面商业化的氮化物蓝光LED
相比, 其外量子效率(EQE) 仍旧处于较低水平. 首先介绍了AlGaN 基深紫外LED 的发展现状 …
相比, 其外量子效率(EQE) 仍旧处于较低水平. 首先介绍了AlGaN 基深紫外LED 的发展现状 …