We propose a novel solar cell structure with photonic nanocrystals coupled to quantum dots
(QDs) for advanced management of photons and carriers. The photonic nanocrystals at the …

Abstract Absorption coefficients of GaSb/GaAs quantum dots (QDs) are calculated by the 8-
band strain-dependent k· p method and Fermi's golden rule. A more realistic but simple …

Molecular Beam Epitaxy (MBE) represents a widely used growth technique to approach the
basic research applied to the growth of semiconductor films and multilayer structures. The …

To absorb the infrared part of the solar spectrum more efficiently, narrow bandgap
hydrogenated nanocrystalline germanium (nc-Ge: H) thin films were fabricated by radio …

The structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) with
different spacer layer thicknesses (ds= 2, 5, 10, and 15 nm) are reported. X-ray diffraction …

We propose a novel method to fabricate quantum dot (QD) arrays, utilizing nanometer-sized
columnar structures of obliquely deposited thin films arising from the self-shadowing effect …

Superlattice heterostructure of dislocation-free Ge quantum dots buried in Si spacer layers
has been synthesized using ultra high vacuum-chemical vapor deposition technique. The …

Four pairs of p–i–n structures based on polymorphous Si: H (pm-Si: H) are fabricated by the
method of plasma-enhanced chemical vapor deposition. The structures in each pair are …

This work demonstrates a rib waveguide photodetector based on a vertical Si pin junction
with Ge islands operating in the spectral region around λ= 1.55 μm at room temperature. A …

В настоящее время основные тенденции развития солнечной энергетики направлены
на уменьшение удельной стоимости фотопреобразователя (ФП), которая …