Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …

Extended defect reduction in GaN grown by lateral epitaxial overgrowth (LEO) on large-area
SiO 2/GaN/Al 2 O 3 wafers by low pressure metalorganic chemical vapor deposition is …

We have compared by photoluminescence (PL) the radiative quantum efficiencies η of an
array of InAs/GaAs quantum boxes (QBs) obtained by self‐organized growth and of a single …

Epitaxial lateral overgrowth GaN structures oriented along the< 112_0> direction were
comprehensively characterized by cathodoluminescence (CL) microscopy and micro …

A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective
epitaxy is presented. The variation in axial growth rate of InAs nanowires inside oxide …

Hydride Vapor Phase Epitaxy Revisited - Selected Topics in Quantum Electronics, IEEE
Journal on Page 1 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS …

Conformal growth is a confined epitaxial lateral overgrowth technique previously used to
achieve low dislocation density GaAs films on Si. Conformal growth was used here to obtain …

Selective and lateral overgrowth by Metal Organics Vapour Phase Epitaxy (MOVPE) was
carried out until coalescence to produce smooth and optically flat thick GaN layers. A GaN …

3D integration of III-V semiconductors with Si CMOS is highly attractive since it allows
combining new functions such as photonic and analog devices with digital signal processing …

Local strain relaxation as well as inhomogeneous impurity incorporation in epitaxial laterally
overgrown GaN ELOG structures is microscopically characterized using spectrally resolved …