We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

In this review, we present the photoreflectance (PR) spectroscopy as a powerful tool for
investigations of bulk semiconductors and semiconductor heterostructures. We discuss the …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

We present a comprehensive theoretical and experimental analysis of 1.3-μm
InGaAsN/GaAs lasers. After introducing the 10-band k/spl middot/p Hamiltonian which …

We derive an analytical model to describe the conduction-band states of GaNAs-based
quantum well structures, including the band anticrossing effect between N resonant states …

We present a parallel implementation of the multi-bank k· p code () for calculation of the
electronic structure and optical properties of zinc blend structure semiconductor quantum …

We have investigated the electronic band structure and optical transparency conditions of In
x Ga 1− x As 1− y N y∕ Ga As quantum well (QW) using 10-band, 8-band and 6-band k∙ p …

Whereas laser emission at 1.55 μm is difficult to realize using type-I InGaAsN quantum wells
grown on GaAs, we show that it can be achieved with far fewer restrictions on the growth by …

In this paper, we present the application of photoreflectance (PR) spectroscopy to
investigate the energy level structure of GaInNAs-based quantum wells (QWs). Series of …

Alloying of GaNxAs1−x with InNxAs1−x⁠: A simple formula for the band gap parametrization
of Ga1−yInyNxAs1−x alloys | Journal of Applied Physics | AIP Publishing Skip to Main Content …