Gate work function-engineered graded-channel macaroni mosfet: exploration of temperature and localized trapped charge-induced effects with GIDL analysis
P Banerjee, J Das - Journal of Electronic Materials, 2022 - Springer
The current research paper presents the analytical modelling and simulation-based device
characteristics of a dual-material (DM) gate-graded Channel (GC) macaroni metal-oxide …
characteristics of a dual-material (DM) gate-graded Channel (GC) macaroni metal-oxide …
A physics-based 3-D potential and threshold voltage model for undoped triple-gate FinFET with interface trapped charges
A threshold voltage model based on the solution of the three-dimensional (3-D) Poisson's
equation for an undoped triple-gate (TG) fin-shaped field-effect transistor (FinFET) with …
equation for an undoped triple-gate (TG) fin-shaped field-effect transistor (FinFET) with …
Accurate analytical models of hot carrier degradation in nMOSFET and nFinFET considering saturation effect
ZK Li, ZH Wu, XW Zhang, B Li… - … Science and Technology, 2022 - iopscience.iop.org
In this paper, models of hot carrier degradation (HCD) in nMOSFET and nFinFET, combined
with the physical mechanism and reaction-diffusion framework and considering saturation …
with the physical mechanism and reaction-diffusion framework and considering saturation …
Non‐linear compact model for FinFETs output characteristics
In this study, a non‐linear compact model for I–V characteristics of FinFETs is presented.
The model is developed using the profile of drifting carriers, which plays an important role in …
The model is developed using the profile of drifting carriers, which plays an important role in …
Design methodology considering evolution of statistical corners under long term degradation
H Eslahi, D Mahajan, SA Albahrani… - Microelectronics Journal, 2019 - Elsevier
Statistical corner-based circuit simulation methodology is a popular technique to design
circuits with high yield. Statistical corners, however, change due to long-term device …
circuits with high yield. Statistical corners, however, change due to long-term device …
Hot Carrier Reliability in 45 nm Strained Si/relaxed Si1−xGex CMOS Based SRAM Cell
Hot Carrier Injection is one of the serious reliability issues of the NMOS transistors in the
nanoscale regime. The effect of channel strain on hot carrier reliability of 45 nm strained …
nanoscale regime. The effect of channel strain on hot carrier reliability of 45 nm strained …
Analytical modeling of random discrete traps induced threshold voltage fluctuations in double-gate MOSFET with HfO2/SiO2 gate dielectric stack
An analytical model of threshold voltage fluctuations due to random discrete traps at Si/SiO 2
interface and in gate oxide regions for undoped double-gate (DG) MOSFET with high-k/SiO …
interface and in gate oxide regions for undoped double-gate (DG) MOSFET with high-k/SiO …
Long-term degradation effects in power amplifiers: analysis, modelling and remedies
H Eslahi - 2022 - figshare.mq.edu.au
The wireless communication systems seen with an impressive progress over the last
decades. To continue this progress and reach better performance, device dimensions …
decades. To continue this progress and reach better performance, device dimensions …
[PDF][PDF] Mathematical Modeling Techniques for nm-FinFETs DC Characteristics
UF Ahmed - 2019 - thesis.cust.edu.pk
FinFETs are potential candidates for microwave high-tech applications as their 3D structure
allows effective gate control upon the channel, which results into low leakage current and …
allows effective gate control upon the channel, which results into low leakage current and …