A technique is described for the simultaneous measurement of the difference in the normal
components of strain and of the shear strain in luminescent III-V material from the degree of …

GaAs-based lasers were bonded to oxygen-free high-conductivity (OFHC) copper heat sinks
using a eutectic PbSn solder or a silver-filled conductive epoxy, and life tested. Epoxy …

Strain can alter the properties of semiconductor materials. The selection of a strain
measurement technique is a trade-off between sensitivity, resolution, and field of view …

Measurements of the degree of polarization (rho) of the output of 1.3-mu m InGaAsP
semiconductor diode lasers as a function of current are discussed. It is found that rho …

Numerical calculations and experimental results show that, for the broad range of tensile
strained p-Al x Ga 1− x As/GaAs 1− y P y/n-Al x Ga 1− x As heterostructures widely used in …

Mechanical stress induced by bonding AlGaAs superluminescent diodes to Cu, SiC, or
diamond heat sinks using 40% Pb-60% Sn or 80% Au-20% Sn solder has been observed …

We present a strategy for quantitative spectroscopic analysis of packaging-induced strain
using both finite element analysis and band-structure calculations. This approach holds for a …

Measurement of the strain in the plane of the active region for 1.3 pm InGaAsP ridge
waveguide lasers is presented. A strain model is examined and compared with experimental …

Eutectic Bi/MnBi composites (3.2 volume percent MnBi) have been plane-front directionally
solidified using the Bridgman-Stockbarger method. For the growth velocity range …

The change of spectrum of the AlGaAs/GaAs single quantum well laser diode is measured
under the application of uniform uniaxial in-plane tensile and compressive stress. In the …