Magnetoresistive random access memory: The path to competitiveness and scalability
JG Zhu - Proceedings of the IEEE, 2008 - ieeexplore.ieee.org
This paper provides an in-depth review of the magnetoresistive random access memory
technology and its developments over the past decade. Both the traditional field-driven and …
technology and its developments over the past decade. Both the traditional field-driven and …
Precessional spin current structure for MRAM
MM Pinarbasi, M Tzoufras - US Patent 9,853,206, 2017 - Google Patents
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a
magnetic tunnel junction stack having a significantly improved performance of the free layer …
magnetic tunnel junction stack having a significantly improved performance of the free layer …
Spin transfer torque structure for MRAM devices having a spin current injection capping layer
BA Kardasz, MM Pinarbasi - US Patent 9,728,712, 2017 - Google Patents
A magnetoresistive random-access memory (MRAM) device is disclosed. The device
described herein has a spin current injection capping layer between the free layer of a …
described herein has a spin current injection capping layer between the free layer of a …
Memory cell having magnetic tunnel junction and thermal stability enhancement layer
M Pinarbasi, B Kardasz - US Patent 9,741,926, 2017 - Google Patents
(57) ABSTRACT A magnetoresistive random-access memory (MRAM) device is disclosed.
The device described herein has a thermal stability enhancement layer over the free layer of …
The device described herein has a thermal stability enhancement layer over the free layer of …
High speed low power annular magnetic devices based on current induced spin-momentum transfer
(57) ABSTRACT A high speed and low power method to control and Switch the
magnetization direction and/or helicity of a magnetic region in a magnetic device for memory …
magnetization direction and/or helicity of a magnetic region in a magnetic device for memory …
Precessional spin current structure with non-magnetic insertion layer for MRAM
BA Kardasz, MM Pinarbasi - US Patent 10,665,777, 2020 - Google Patents
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a
magnetic tunnel junction stack having a significantly improved performance of the free layer …
magnetic tunnel junction stack having a significantly improved performance of the free layer …
Precessional spin current structure with high in-plane magnetization for MRAM
MM Pinarbasi, BA Kardasz - US Patent 10,672,976, 2020 - Google Patents
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a
magnetic tunnel junction stack having a significantly improved performance of the free layer …
magnetic tunnel junction stack having a significantly improved performance of the free layer …
Method for manufacturing MTJ memory device
M Pinarbasi - US Patent 9,263,667, 2016 - Google Patents
(57) ABSTRACT A method for manufacturing MTJ pillars for a MTJ memory device. The
method includes depositing multiple MTJ layers on a Substrate, depositing a hard mask on …
method includes depositing multiple MTJ layers on a Substrate, depositing a hard mask on …
Method for manufacturing MTJ memory device
M Pinarbasi - US Patent 9,406,876, 2016 - Google Patents
(51) Int. Cl. A method for manufacturing MTJ pillars for a MTJ memory HOIL 29/82(2006.01)
device. The method includes depositing multiple MTJ layers HOIL 43/12(2006.01) on a …
device. The method includes depositing multiple MTJ layers HOIL 43/12(2006.01) on a …
Bipolar spin-transfer switching
(60) Continuation-in-part of application No. 13/041,104,(Continued) filed on Mar. 4, 2011,
now Pat. No. 8,363,465, which is a division of application No. 12/490,588, filed on Jun …
now Pat. No. 8,363,465, which is a division of application No. 12/490,588, filed on Jun …