Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional …
SK Pathak, A Abate, P Ruckdeschel… - Advanced Functional …, 2014 - Wiley Online Library
Reversible photo‐induced performance deterioration is observed in mesoporous TiO2‐ containing devices in an inert environment. This phenomenon is correlated with the …
C Marichy, M Bechelany, N Pinna - Advanced materials, 2012 - Wiley Online Library
Atomic layer deposition (ALD) is a thin film technology that in the past two decades rapidly developed from a niche technology to an established method. It proved to be a key …
This review article summarized the recent understanding of resistance switching (RS) behavior in several binary oxide thin film systems. Among the various RS materials and …
M Jung, V Gaddam, S Jeon - Nano Convergence, 2022 - Springer
In the present hyper-scaling era, memory technology is advancing owing to the demand for high-performance computing and storage devices. As a result, continuous work on …
A Spessot, H Oh - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the status, the challenges, and the perspective of 1T-1C dynamic random access memory (DRAM) chip. The basic principles of the DRAM are presented …
JP Niemelä, G Marin, M Karppinen - Semiconductor science and …, 2017 - iopscience.iop.org
Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting …
SH Lee - 2016 IEEE International Electron Devices Meeting …, 2016 - ieeexplore.ieee.org
Challenges in scaling of semiconductor memory technologies are reviewed with the focus on DRAM and NAND Flash while demands for memory improvement in the ICT industry are …