Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

MZM Khan, TK Ng, BS Ooi - Progress in Quantum Electronics, 2014 - Elsevier
The advances in lasers, electronic and photonic integrated circuits (EPIC), optical
interconnects as well as the modulation techniques allow the present day society to …

Carrier Dynamics and Modulation Capabilities of 1.55-m Quantum-Dot Lasers

D Gready, G Eisenstein - IEEE Journal of Selected Topics in …, 2013 - ieeexplore.ieee.org
We present a spatially resolved model for multilayer quantum-dot (QD) lasers. The detailed
model incorporates the homogeneous and inhomogeneous gain broadenings. Using this …

Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers

O Karni, KJ Kuchar, A Capua, V Mikhelashvili… - Applied Physics …, 2014 - pubs.aip.org
We report on a characterization of fundamental gain dynamics in recently developed
InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength pump-probe …

[HTML][HTML] Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots

I Khanonkin, AK Mishra, O Karni, V Mikhelashvili… - AIP Advances, 2017 - pubs.aip.org
The charge carrier dynamics of improved InP-based InAs/AlGaInAs quantum dot (QD)
semiconductor optical amplifiers are examined employing the multi-wavelength ultrafast …

Extreme nonlinearities in InAs/InP nanowire gain media: the two-photon induced laser

A Capua, O Karni, G Eisenstein, JP Reithmaier… - Optics …, 2012 - opg.optica.org
We demonstrate a novel laser oscillation scheme in an InAs/InP wire-like quantum dash
gain medium. A short optical pulse excites carriers by two photon absorption which relax to …

Complex characterization of short-pulse propagation through InAs/InP quantum-dash optical amplifiers: from the quasi-linear to the two-photon-dominated regime

A Capua, A Saal, O Karni, G Eisenstein… - Optics …, 2011 - opg.optica.org
We describe direct measurements at a high temporal resolution of the changes experienced
by the phase and amplitude of an ultra-short pulse upon propagation through an …

The effect of structural parameters on the in-plane coupling between quantum dashes of a dense ensemble in the InAs-InP material system

K Ryczko, G Sęk, J Misiewicz - Journal of Applied Physics, 2014 - pubs.aip.org
In this work, we investigate the importance of lateral electronic coupling in a dense
ensemble of anisotropic epitaxial nanostructures called quantum dashes. The respective …

Gain and refractive index dynamics in p-doped InAs quantum dash semiconductor optical amplifiers

K Komolibus, T Piwonski, S Joshi, N Chimot… - Applied Physics …, 2016 - pubs.aip.org
The ultrafast carrier dynamics in a p-doped dash-in-a-well structure at 1.5 μm is
experimentally investigated. An analysis of the timescales related to carrier relaxation and …

Two photon induced lasing in 1550 nm quantum dash optical gain media

A Capua, A Saal, JP Reithmaier, K Yvind… - … and Exposition on …, 2011 - opg.optica.org
We report on a unique lasing mechanism observed in quantum dash Gain media. While the
gain media is electrically pumped below lasing threshold, a strong optical pulse excites …

[PDF][PDF] Carrier Dynamics in Inhomogeneously Broadened InAs/InP Quantum-Dot Optical Amplifiers

KJ Kuchar, G Sęk, G Eisenstein - researchgate.net
Today, when one can access Internet through device of a size of woman's palm the next step
is to make this telecommunication fast and accurate, to send a lot of data without any …