Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron‐Style Models

J Bisquert - Advanced Energy Materials, 2024 - Wiley Online Library
Halide perovskites are at the forefront of active research in many applications, such as high
performance solar cells, photodetectors, and synapses and neurons for neuromorphic …

Organic iontronic memristors for artificial synapses and bionic neuromorphic computing

Y Xia, C Zhang, Z Xu, S Lu, X Cheng, S Wei, J Yuan… - Nanoscale, 2024 - pubs.rsc.org
To tackle the current crisis of Moore's law, a sophisticated strategy entails the development
of multistable memristors, bionic artificial synapses, logic circuits, and brain-inspired …

Current-controlled memristors: resistive switching systems with negative capacitance and inverted hysteresis

J Bisquert - Physical Review Applied, 2023 - APS
Resistive switching in memristors is being amply investigated for different applications in
nonvolatile memory, neuromorphic computing, and programmable logic devices. Memristors …

[HTML][HTML] Resistance transient dynamics in switchable perovskite memristors

J Bisquert, A Bou, A Guerrero… - APL Machine …, 2023 - pubs.aip.org
Memristor devices have been investigated for their properties of resistive modulation that
can be used in data storage and brain-like computation elements as artificial synapses and …

[HTML][HTML] Toolflow for the algorithm-hardware co-design of memristive ANN accelerators

M Wabnitz, T Gemmeke - Memories-Materials, Devices, Circuits and …, 2023 - Elsevier
The capabilities of artificial neural networks are rapidly evolving, so are the expectations for
them to solve ever more challenging tasks in numerous everyday situations. Larger, more …

GeS conducting-bridge resistive memory device with IGZO buffer layer for highly uniform and repeatable switching

A Ali, H Abbas, J Li, DS Ang - Applied Physics Letters, 2023 - pubs.aip.org
A double stacked monochalcogenide GeS-based conducting-bridge random access
memory (CBRAM) device with a IGZO buffer layer is investigated for highly improved …

Bulk axial Landau levels in the helically magnetized Weyl Hamiltonian and application to multistate memory devices

V Rogers, S Chaudhary, R Nguyen, JAC Incorvia - Physical Review B, 2024 - APS
In this paper, we study the electronic structure of a helically magnetized magnetic Weyl
semimetal and propose a multistate memory device utilizing the transport in such a magnetic …

Hysteresis, Rectification, and Relaxation Times of Nanofluidic Pores for Neuromorphic Circuit Applications

J Bisquert - Advanced Physics Research, 2024 - Wiley Online Library
Based on the emergence of iontronic fluidic components for brain‐inspired computation, the
general dynamical behavior of nanopore channels is discussed. The main memory effects of …

Pawn: Programmed analog weights for non-linearity optimization in memristor-based neuromorphic computing system

SA Khan, M Oli-Uz-Zaman… - IEEE Journal on Emerging …, 2023 - ieeexplore.ieee.org
Memristors offer advantages as a hardware solution for neuromorphic systems. However,
their nonlinear device property makes the weight update inaccurately and reduces the …

A Ternary Weight Mapping and Charge-mode Readout Scheme for Energy Efficient FeRAM Crossbar Compute-in-Memory System

T Cao, Z Zhang, WL Goh, C Liu… - 2023 IEEE 5th …, 2023 - ieeexplore.ieee.org
This work presents an edge-AI system built on capacitive ferroelectric random-access
memory (FeRAM) crossbar array, which is compatible with CMOS backend-of-line (BEOL) …