III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
III-Nitride nanowire optoelectronics
Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …
intensively studied in the past decade. Unique to this material system is that its energy …
[HTML][HTML] III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications
Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …
electromagnetic spectrum, making them a promising material system for various …
[PDF][PDF] Ordered nanowire array blue/near‐UV light emitting diodes
ZnO-based light emitting diodes (LEDs) have been considered as a potential candidate for
the next generation of blue/near-UV light sources,[1] due to a direct wide bandgap energy of …
the next generation of blue/near-UV light sources,[1] due to a direct wide bandgap energy of …
AlGaN nanowires for ultraviolet light-emitting: recent progress, challenges, and prospects
In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN)
nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such …
nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such …
Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks
A Bengoechea-Encabo, F Barbagini… - Journal of Crystal …, 2011 - Elsevier
The influence of the substrate temperature, III/V flux ratio, and mask geometry on the
selective area growth of GaN nanocolumns is investigated. For a given set of growth …
selective area growth of GaN nanocolumns is investigated. For a given set of growth …
Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
We report on the thorough investigation of light emitting diodes (LEDs) made of core-shell
nanorods (NRs) with InGaN/GaN quantum wells (QWs) in the outer shell, which are grown …
nanorods (NRs) with InGaN/GaN quantum wells (QWs) in the outer shell, which are grown …
Gallium nitride nanostructures for light-emitting diode applications
This review summarizes recent research on GaN nanostructures for light-emitting diode
(LED) applications. GaN nanostructure fabrication methods are first discussed, followed by a …
(LED) applications. GaN nanostructure fabrication methods are first discussed, followed by a …
GaN/AlGaN nanocolumn ultraviolet light-emitting diode using double-layer graphene as substrate and transparent electrode
The many outstanding properties of graphene have impressed and intrigued scientists for
the last few decades. Its transparency to light of all wavelengths combined with a low sheet …
the last few decades. Its transparency to light of all wavelengths combined with a low sheet …
Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
NA Sanford, PT Blanchard, KA Bertness… - Journal of Applied …, 2010 - pubs.aip.org
Analysis of steady-state and transient photoconductivity measurements at room temperature
performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration …
performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration …