Magnetic domain wall based synaptic and activation function generator for neuromorphic accelerators

SA Siddiqui, S Dutta, A Tang, L Liu, CA Ross… - Nano …, 2019 - ACS Publications
Magnetic domain walls are information tokens in both logic and memory devices and hold
particular interest in applications such as neuromorphic accelerators that combine logic in …

Low-barrier nanomagnets as p-bits for spin logic

R Faria, KY Camsari, S Datta - IEEE Magnetics Letters, 2017 - ieeexplore.ieee.org
It has recently been shown that a suitably interconnected network of tunable telegraphic
noise generators or “p-bits” can be used to perform even precise arithmetic functions like a …

[HTML][HTML] Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing

M Alamdar, T Leonard, C Cui, BP Rimal, L Xue… - Applied Physics …, 2021 - pubs.aip.org
There are pressing problems with traditional computing, especially for accomplishing data-
intensive and real-time tasks, that motivate the development of in-memory computing …

On-chip learning for domain wall synapse based fully connected neural network

D Bhowmik, U Saxena, A Dankar, A Verma… - Journal of Magnetism …, 2019 - Elsevier
Spintronic devices are considered as promising candidates in implementing neuromorphic
systems or hardware neural networks, which are expected to perform better than other …

Field-free magnetization switching by utilizing the spin Hall effect and interlayer exchange coupling of iridium

Y Liu, B Zhou, JG Zhu - Scientific reports, 2019 - nature.com
Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a
competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive …

Design and evaluation of a spintronic in-memory processing platform for nonvolatile data encryption

S Angizi, Z He, N Bagherzadeh… - IEEE transactions on …, 2017 - ieeexplore.ieee.org
In this paper, we propose an energy-efficient reconfigurable platform for in-memory
processing based on novel four-terminal spin Hall effect-driven domain wall motion devices …

Spintronic logic design methodology based on spin Hall effect–driven magnetic tunnel junctions

W Kang, Z Wang, Y Zhang, JO Klein… - Journal of Physics D …, 2016 - iopscience.iop.org
Conventional complementary metal-oxide-semiconductor (CMOS) technology is now
approaching its physical scaling limits to enable Moore's law to continue. Spintronic devices …

On-chip learning of a domain-wall-synapse-crossbar-array-based convolutional neural network

VB Desai, D Kaushik, J Sharda… - Neuromorphic …, 2022 - iopscience.iop.org
Abstract Domain-wall-synapse-based crossbar arrays have been shown to be very efficient,
in terms of speed and energy consumption, while implementing fully connected neural …

Hybrid spin-CMOS polymorphic logic gate with application in in-memory computing

S Angizi, Z He, A Chen, D Fan - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this article, we initially present a hybrid spin-CMOS polymorphic logic gate (HPLG) using
a novel 5-terminal magnetic domain wall motion device. The proposed HPLG is able to …

Beyond cmos

S Das, A Chen, M Marinella - 2021 IEEE International …, 2021 - ieeexplore.ieee.org
Dimensional and functional scaling 1 1 Functional Scaling: Suppose that a system has been
realized to execute a specific function in a given, currently available, technology. We say that …