Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …

Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …

The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …

Human breath has long been known as a system that can be used to diagnose diseases.
With advancements in modern nanotechnology, gas sensors can now diagnose, predict …

The performances of mid-infrared (IR) quantum cascade lasers (QCLs) are now reaching a
maturity level that enables a variety of applications which require compact laser sources …

Heteroepitaxy of III–V compound semiconductors on industry standard (001) silicon (Si)
substrates is highly desirable for large-scale electronic and photonic integrated circuits …

Heteroepitaxy of indium phosphide (InP) and its lattice-matched alloys on silicon (Si) show
great promise for Si-based optoelectronic devices and photonic integrated circuits. Here, we …

In the past few decades, numerous high-performance silicon (Si) photonic devices have
been demonstrated. Si, as a photonic platform, has received renewed interest in recent …

We have developed InP-based 1.55-μm lasers epitaxially grown on (001) Si substrates for
photonics integration. To overcome the fundamental material challenges associated with …

Monolithic integration of high-performance semiconductor lasers on silicon enables wafer-
scale optical interconnects within photonic integrated circuits on a silicon manufacturing …