Impact of work function variation for enhanced electrostatic control with suppressed ambipolar behavior for dual gate L-TFET
The favorable electrostatic potential and tunneling underneath the overall gate region, which
prevents legitimate source to drain tunneling, controllability over the gate is assisted in …
prevents legitimate source to drain tunneling, controllability over the gate is assisted in …
A new stacked gate oxide L-shaped tunnel field effect transistor
In this paper, a new stacked gate oxide L-shaped Tunnel Field Effect Transistor (LTFET) is
proposed. The stacked gate oxide structure incorporates high-k and SiO2 dielectrics. The …
proposed. The stacked gate oxide structure incorporates high-k and SiO2 dielectrics. The …
Assessment of temperature and ITCs on single gate L-shaped tunnel FET for low power high frequency application
P Singh, DS Yadav - Engineering Research Express, 2024 - iopscience.iop.org
In a vertical TFET structure, controllability over the gate is enhanced because of the
favorable electrostatic potential and tunneling under the entire gate region by preventing the …
favorable electrostatic potential and tunneling under the entire gate region by preventing the …
Assessing the Impact of Source Pocket Length Variation to Examine DC/RF to Linearity Performance of DG-TFET
This research examines the variation in source pocket length at the corner region of source–
channel interface (SCi) with hetero-oxide triple metal gate. The investigated DC and analog …
channel interface (SCi) with hetero-oxide triple metal gate. The investigated DC and analog …
Nanoelectronic materials, devices and modeling: Current research trends
As CMOS scaling is approaching the fundamental physical limits, a wide range of new
nanoelectronic materials and devices have been proposed and explored to extend and/or …
nanoelectronic materials and devices have been proposed and explored to extend and/or …
Theory of Optimizing the Tunneling Probability Through a Potential Barrier by Acoustically Augmented Phonons
P Kumar - Journal of the Korean Physical Society, 2020 - Springer
In this research, the optimization of the tunneling probability through a potential barrier by
superimposing ultra high frequency (UHF) acoustic wave over the source of the incoming …
superimposing ultra high frequency (UHF) acoustic wave over the source of the incoming …
[引用][C] Design and Investigation of Junction-less TFET (JL-TFET) for the Realization of Logic Gates
The demand for energy-efficient electronics has propelled the exploration of alternative
transistor technologies, among which Tunnel Field-Effect Transistors (TFETs) have garnered …
transistor technologies, among which Tunnel Field-Effect Transistors (TFETs) have garnered …