Influence of cavity length and emission wavelength on the characteristic temperature in AlGaAs lasers
The dependence of the characteristic temperature T 0 on the cavity length and lasing
wavelength is theoretical and experimentally analyzed. The devices are straight separate …
wavelength is theoretical and experimentally analyzed. The devices are straight separate …
Thermal resistance of double heterostructure separate confinement GaAs\,/AlGaAs semiconductor lasers in stripe geometry configuration
The behavior of a laser diode is affeeted by an inerease of temperatnre within its volume
during operation, whieh is determined by the value of the thermal resistan ce of the device …
during operation, whieh is determined by the value of the thermal resistan ce of the device …
Low‐temperature LPE technique for the performance of visible AlGaAs (SC) lasers
P Díaz, TA Prutskij, F López - Crystal Research and Technology, 1990 - Wiley Online Library
The possibilities of the low‐temperature (LT)‐LPE technique in the performance of visible
AlGaAs laser diodes are studied. Low current density visible lasers λ˜ 746 nm has been …
AlGaAs laser diodes are studied. Low current density visible lasers λ˜ 746 nm has been …
Investigation of LPE Ga1− xAlxAs/GaAs laser structures by double crystal diffractometry
C Bocchi, C Ferrari, P Franzosi, M Scaffardi… - Journal of crystal …, 1991 - Elsevier
The possibility of characterizing Ga 1− x Al x As/GaAs laser structures, with both a single and
double confinement, using the double crystal X-ray diffractometry has been investigated …
double confinement, using the double crystal X-ray diffractometry has been investigated …
Determinacion de Espesores de Capas Nonometricas en Heteroestructuras de GaAs-AlxGa1-xAs Mediante SEM
T Prutskij, R Silva, F Chávez… - Revista Mexicana de …, 1994 - rmf.smf.mx
Se reportan los resultados de la observación directa mediante microscopía electrónica de
barrido (SEM) de los espesores de capas nanométricas en heteroestructuras multicapas de …
barrido (SEM) de los espesores de capas nanométricas en heteroestructuras multicapas de …
[引用][C] Thermal resistance of double heterostructure separate confinement GaAs/AIGaAs semiconductor lasers in stripe geometry configuration
TROFD HETEROSTRUCTURE
[引用][C] Cavidades ópticas con perfil recto y parabólico del índice de refracción en láseres de AlGaAs e InGaN
JAM Alfonso, MS Colina, FG Reina - 2007 - Editorial Universitaria
[引用][C] T. PRUTSKIJ Centro de Investigación en Dispositivos Semiconductores, IC-BUAP Apartado postal 1651, 72000 Puebla, Pue., México R. SILVA Instituto de …
FCYF SILVA-ANDRADE - Revista mexicana de física, 1995 - Sociedad Mexicana de Física