This paper presents an in-depth overview of the present status and novel developments in
the field of plasma processing of low dielectric constant (low-k) materials developed for …

Organosilicate glass (OSG) films are a critical component in modern electronic devices, with
their electrical properties playing a crucial role in device performance. This comprehensive …

This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

The degradation of porous low-k materials, like SiOCH, under plasma processing continues
to be a problem in the next generation of integrated-circuit fabrication. Due to the exposure …

The review article provides an overview of the most important and popular techniques for
evaluating the porosity of thin films developed for various applications. These methods …

Modification of ultra-low-k films by extreme ultraviolet (EUV) and vacuum ultraviolet (VUV)
emission with 13.5, 58.4, 106, 147 and 193 nm wavelengths and fluences up to 6× 10 18 …

The interaction of F atoms with porous SiOCH low-k films at a temperature of~ 14 C is
studied both experimentally and theoretically. Samples of different ultra-low-k SiOCH films …

Porous dielectric materials offer lower capacitances that reduce RC time delays in integrated
circuits. Typical porous low dielectric (low-k) materials include SiOCH—silicon dioxide with …

The damage induced by CO 2 and O 2 plasmas to an ultra low-k (ULK) dielectric film with a
dielectric constant (κ) of 2.2 was investigated. The dielectric constant was observed to …

Removal of amorphous carbon and tin films from a Mo: Si multilayer mirror surface in a
hydrogen plasma and its afterglow is investigated. In the afterglow, the mechanism of Sn …