We present the data on temporal (t) drift of parameters in chalcogenide phase change
memory that significantly complement the earlier published results. The threshold voltage V …

Optical properties of thin chalcogenide films from the systems As–S (Se) and As–S–Se were
investigated as a function of the film composition, film thickness and conditions of …

Photoinduced diffraction grating formation in amorphous As2S3 thin films has been studied
using imaging ellipsometry. We first have applied the ACCURION Nanofilm-EP3SE Imaging …

The optical properties of Ge 15 Sb 5 Se 80 (GSS) and Ge 15 Sb 5 Te 80 (GST) films
prepared by thermal evaporation method were investigated in the photon energy range from …

Carbon films on the Si/SiO 2 substrate are fabricated using modified method of close space
sublimation at atmospheric pressure. The film properties have been characterized by micro …

Nano-composite films of Au particles in Teflon were obtained by thermal vacuum deposition.
The obtained films were characterized by the different shapes and dimensions of the …

The structural-phase transformations induced by air annealing of SiO x and SiO x< Er, F>
films were studied by the combined use of infrared spectroscopy and ellipsometry. The films …

A review is given on the application of the reflectance ellipsometry for optical
characterization of bulk materials and thin films with thickness between λ/20 and 2λ (at λ …

In the UV-visible-near infrared regions from 245 to 1000 nm, variable-angle spectroscopic
ellipsometer (VASE) was used to investigate optical functions of As 2 S 3 and As 2 Se 3 thin …

The electronic structure of crystalline As 2 S 3 and As 2 Se 3 has been calculated in this
paper. We present the energy bands, density of states (DOS) and the Compton profiles …