Emissive displays based on light‐emitting diodes (LEDs), with high pixel density, luminance,
efficiency, and large color gamut, are of great interest for applications such as watches …

Over the last decades, continuous technological advancements have been made in III‐
nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement …

Here we demonstrate high-brightness InGaN/GaN green light emitting diodes (LEDs) with in-
situ low-temperature GaN (LT-GaN) nucleation layer (NL) and ex-situ sputtered AlN NL on 4 …

We propose an innovative ultrathin AlGaN/InAlN heterojunction (HJ) inserted in AlGaN-
based deep ultraviolet light-emitting diode (DUV LED) structure. Theoretical investigations …

The recombination rates in InGaN/AlGaN/GaN multiple quantum wells (MQWs) emitting in
the green-yellow and grown with different Al compositions in the AlGaN interlayer (IL) are …

In group‐III‐nitride quantum wells (QWs), a strong piezoelectric field is formed. A built‐in
potential from the p–n junction is working in the opposite direction depending on an …

The natural band alignments of Sc x Al 1− x N/GaN heterojunctions, with Sc-contents
ranging from 0% to 25%, are investigated by first-principles density functional theory with the …

Commercial light emitting diode (LED) materials-blue (ie, InGaN/GaN multiple quantum
wells (MQWs) for display and lighting), green (ie, InGaN/GaN MQWs for display), and red (ie …

We demonstrated two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with
distributed Bragg reflector (DBR) and without DBR to investigate the effect of dielectric …

The thermal stability of nearly lattice-matched AlInN films grown via metalorganic vapor
phase epitaxy on GaN/sapphire is investigated. The structural and morphological changes …