A vertical-cavity surface emitting laser (VCSEL) was invented 30 years ago. A lot of unique
features can be expected, such as low-power consumption, wafer-level testing, small …

The surface-emitting laser (SEL) is considered one of the most important devices for optical
interconnects and LANs, enabling ultra parallel information transmission in lightwave and …

The vertical-cavity surface-emitting laser (VCSEL) is becoming a key device in high-speed
optical local-area networks (LANs) and even wide-area networks (WANs). This device is …

We have realized high-quality GaInAs-GaAs quantum wells (QWs) with high strain of over
2% on GaAs (311) B substrate for a polarization controlled vertical-cavity surface-emitting …

Long wavelength GaInNAsSb-SQW lasers and GaInAsSb-SQW lasers that include a small
amount of Sb were successfully grown by gas-source molecular beam epitaxy (GSMBE). We …

A surfactant effect of antimony (Sb) on highly strained GaInAs quantum wells (QWs) was
studied by molecular beam epitaxy. Noticeable improvement of the photoluminescence (PL) …

In this study, we demonstrate a highly strained 1.2 µm GaInAs/GaAs quantum well laser
which may be used in high-speed local area networks. Edge emitting lasers with either a …

Long-wavelength GaInNAsSb SQW lasers and GaInAsSb SQW lasers that include small
amounts of Sb have been successfully grown by gas-source molecular beam epitaxy …

The electronic structures of the Ga 1− x In x N y As 1− y/GaAs compressive strained quantum
wells are investigated using 6× 6 k⋅ p Hamiltonian including the heavy hole, light hole, and …

A metal organic chemical vapour deposition grown GaInNAs quantum well laser emitting at
1.25 µm is reported. The lowest threshold current density obtained by 50 µm wide stripe …