Guiding, modulating, and emitting light on silicon-challenges and opportunities

M Lipson - Journal of Lightwave Technology, 2005 - ieeexplore.ieee.org
Silicon photonics could enable a chip-scale platform for monolithic integration of optics and
microelectronics for applications of optical interconnects in which high data streams are …

Silicon porosification: state of the art

G Korotcenkov, BK Cho - Critical Reviews in Solid State and …, 2010 - Taylor & Francis
This review is devoted to the analysis of the problems related to fabrication of the Si porous
layers. The review was motivated by a great interest to Si-based porous materials from nano …

Rationale and challenges for optical interconnects to electronic chips

DAB Miller - Proceedings of the IEEE, 2000 - ieeexplore.ieee.org
The various arguments for introducing optical interconnections to silicon CMOS chips are
summarized, and the challenges for optical, optoelectronic, and integration technologies are …

High-quality Ge epilayers on Si with low threading-dislocation densities

HC Luan, DR Lim, KK Lee, KM Chen… - Applied physics …, 1999 - pubs.aip.org
High-quality Ge epilayers on Si with low threading-dislocation densities were achieved by a
two-step ultrahigh vacuum/chemical-vapor-deposition process followed by cyclic thermal …

Effect of size and roughness on light transmission in a waveguide: Experiments and model

KK Lee, DR Lim, HC Luan, A Agarwal, J Foresi… - Applied Physics …, 2000 - pubs.aip.org
In this letter, we experimentally evaluate the effect of miniaturization and surface roughness
on transmission losses within a Si/SiO2 waveguide system, and explain the results using a …

Optical bistability on a silicon chip

VR Almeida, M Lipson - Optics letters, 2004 - opg.optica.org
We demonstrate, for the first time to our knowledge, optical bistability on a highly integrated
silicon device, using a 5‐µm-radius ring resonator. The strong light-confinement nature of …

Strain-induced band gap shrinkage in Ge grown on Si substrate

Y Ishikawa, K Wada, DD Cannon, J Liu… - Applied Physics …, 2003 - pubs.aip.org
Band gap shrinkage induced by tensile strain is shown for Ge directly grown on Si substrate.
In Ge-on-Si pin diodes, photons having energy lower than the direct band gap of bulk Ge …

Silicon-compatible surface plasmon optical elements

CG Durfee, RT Collins, TE Furtak - US Patent 7,949,210, 2011 - Google Patents
This invention provides fundamental science and novel device architectures for surface
plasmon (SP)-based, comple mentary metal oxide semiconductor (CMOS)-compatible …

Nanophotonic integration in state-of-the-art CMOS foundries

JS Orcutt, A Khilo, CW Holzwarth, MA Popović, H Li… - Optics express, 2011 - opg.optica.org
We demonstrate a monolithic photonic integration platform that leverages the existing state-
of-the-art CMOS foundry infrastructure. In our approach, proven XeF_2 post-processing …

Silicon on ultra-low-loss waveguide photonic integration platform

JF Bauters, ML Davenport, MJR Heck, JK Doylend… - Optics express, 2013 - opg.optica.org
We demonstrate a novel integrated silicon and ultra-low-loss Si_3N_4 waveguide platform.
Coupling between layers is achieved with (0.4±0.2) dB of loss per transition and a 20 nm 3 …