A review of terahertz sources
RA Lewis - Journal of Physics D: Applied Physics, 2014 - iopscience.iop.org
Bibliometric data set the scene by illustrating the growth of terahertz work and the present
interest in terahertz science and technology. After locating terahertz sources within the …
interest in terahertz science and technology. After locating terahertz sources within the …
Terahertz spectroscopy: Encoding the discovery, instrumentation, and applications toward pharmaceutical prospectives
MR Patil, SB Ganorkar, AS Patil… - Critical Reviews in …, 2022 - Taylor & Francis
Terahertz (THz) spectroscopy is an emerging field for quality control of pharmaceuticals,
which uses T-waves for detection. T-waves fall in between infrared and microwave …
which uses T-waves for detection. T-waves fall in between infrared and microwave …
[图书][B] Terahertz Spectroscopy: A Cutting Edge Technology
J Uddin - 2017 - books.google.com
The terahertz regime of the electromagnetic spectrum was largely unexplored due to the
lack of technology needed to generate and detect the radiation. However, in the last couple …
lack of technology needed to generate and detect the radiation. However, in the last couple …
Terahertz oscillations in an In0. 53Ga0. 47As submicron planar Gunn diode
The length of the transit region of a Gunn diode determines the natural frequency at which it
operates in fundamental mode—the shorter the device, the higher the frequency of …
operates in fundamental mode—the shorter the device, the higher the frequency of …
Plasma wave oscillations in nanometer field effect transistors for terahertz detection and emission
The channel of a field effect transistor can act as a resonator for plasma waves propagating
in a two-dimensional electron gas. The plasma frequency increases with reduction of the …
in a two-dimensional electron gas. The plasma frequency increases with reduction of the …
Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz
We present the first results of a planar Gunn diode made in In 0.53 Ga 0.47 As on an InP
substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device …
substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device …
Asymmetrically engineered nanoscale transistors for on-demand sourcing of terahertz plasmons
Terahertz (THz) plasma oscillations represent a potential path to implement ultrafast
electronic devices and circuits. Here, we present an approach to generate on-chip THz …
electronic devices and circuits. Here, we present an approach to generate on-chip THz …
Terahertz electronic devices
The frequency band of the electromagnetic spectrum between microwaves and infrared is
nowadays defined as the Terahertz band (1 THz corresponds to 1012 Hz). The development …
nowadays defined as the Terahertz band (1 THz corresponds to 1012 Hz). The development …
Gunn oscillations in a self-switching nanodiode
The feasibility of Gunn oscillations in a planar nanoscale unipolar diode or a self-switching
device (SSD) is analyzed using Monte Carlo simulations. The asymmetric nanochannel that …
device (SSD) is analyzed using Monte Carlo simulations. The asymmetric nanochannel that …
Comparative Monte Carlo analysis of InP-and GaN-based gunn diodes
In this work, we report on Monte Carlo simulations to study the capability to generate Gunn
oscillations of diodes based on InP and GaN with around 1 μm active region length. We …
oscillations of diodes based on InP and GaN with around 1 μm active region length. We …