We report on the enhancement of spin Hall angle from the CoFeB/Pt interface by introducing
nitrogen into the Pt thin film. Spin-torque ferromagnetic resonance measurements on the …

Materials with large perpendicular magnetic anisotropy (PMA) are candidates for spintronic
devices, such as magnetic random-access memory, etc., due to their stable magnetic …

We have compared the spin Hall magnetoresistance (SMR) in Fe/Pt and Fe/CuO x (with
natural oxidation) bilayers with varying the thickness of Fe layer. A larger SMR in Fe/CuO x …

The'pseudo-Edelstein'effect by which charge current J x converts to pseudo-spin
polarization, τ z, has been investigated theoretically for an infinite sheet of silicene …

Spin to pseudo-spin conversion by which the non-equilibrium normal sublattice pseudo-spin
polarization could be achieved by magnetic field has been proposed in graphene …

Abstract Spin‐Orbit Torque (SOT) Magnetic Random‐Access Memories (MRAM) have
shown promising results toward the realization of fast, non‐volatile memory systems …

We live in a society defined by constant growth. This is exemplified by information
technologies which, over a time period of only a few decades, have transformed our way of …

Spin to pseudo-spin conversion by which spin population imbalance converts to non-
equilibrium pseudo-spin density in Dirac systems has been investigated particularly for …