Ion-beam-induced amorphization in Si has attracted significant interest since the beginning
of the use of ion implantation for the fabrication of Si devices. A number of theoretical …

The solid phase crystallization of chemical vapor deposited amorphous silicon films onto
oxidized silicon wafers, induced either by thermal annealing or by ion beam irradiation at …

Measurements during pulsed laser irradiation indicate that amorphous Si melts at a
temperature 200±50 K below the crystalline value. Below energy densities required to melt …

Thin layers of amorphous silicon (a-Si) were produced by noble gas ion implantation of
(100) substrates held at 77 K. Rutherford backscattering and channeling, and differential …

Amorphous Si and Ge layers, produced by noble gas (Ar or Xe) implantation of single crystal
substrates, have been crystallized in a differential scanning calorimeter (DSC). The MeV …

Laser Annealing of Semiconductors deals with the materials science of surfaces that have
been subjected to ultrafast heating by intense laser or electron beams. This book is …

The Panel was charged with assessing the present scientific understanding of the size-
dependent physical and chemical properties of clusters, the methods of synthesis of …

Molecular-dynamics simulations of amorphous silicon are described, using the two-and
three-body interaction potentials constructed by Stillinger and Weber. The amorphous …

Amorphous silicon (a-Si) networks have been generated from melted Si with various
quenching rates by molecular-dynamics (MD) simulations employing the Tersoff potential …

The incorporation of impurities into solids by bombardment with energetic ions is a non-
equilibrium process which can result in intriguing near-surface property changes. This …