Semiconductor systems and methods may include a semiconductor processing chamber
having a gas box defining an access to the semiconductor processing chamber. The …

Semiconductor systems and methods may include a semi conductor processing chamber
having a gas box defining an access to the semiconductor processing chamber. The cham …

3, 969077 4006047 4, 190488 4.209. 357 4,214,946 4, 232060 4.234. 628 4,265.943
4,340,462 4,341,592 4,361,418 4,364,803 4,368.223 4, 374698 4,381,441 4,397,812 …

Embodiments of the present invention pertain to methods of forming more symmetric
spacers which may be used for self-aligned multi-patterning processes. A conformal spacer …

Described processing chambers may include a chamber housing at least partially defining
an interior region of the semiconductor processing chamber. The chambers may include a …

Methods are described herein for etching metal films which are difficult to volatize. The
methods include exposing a metal film to a chlorine-containing precursor (eg Cl). Chlo rine …

(57) ABSTRACT A methodofetching carbon films on patterned heterogeneous structures is
described and includes a gas phase etch using remote plasma excitation. The remote …

4,006,047 4,209,357 4,214,946 4,232,060 4,234.628 4,265,943 4,364,803 4,368,223
4,397,812 4,468.413 4,565,601 4,571,819 4,579,618 4,585,920 4,625,678 4,632,857 …

An exemplary faceplate may include a conductive plate defining a plurality of apertures. The
faceplate may addi tionally include a plurality of inserts, and each one of the plurality of …

Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The
methods include ion bombardment of a patterned substrate having high aspect ratio …