High frequency, high efficiency, and high power density gan-based llc resonant converter: State-of-the-art and perspectives

SA Mortazavizadeh, S Palazzo, A Amendola… - Applied Sciences, 2021 - mdpi.com
Soft switching for both primary and secondary side devices is available by using LLC
converters. This resonant converter is an ideal candidate for today's high frequency, high …

Circuit design techniques for reducing the effects of magnetic flux on GaN-HEMTs in 5-MHz 100-W high power-density LLC resonant DC–DC converters

A Hariya, T Koga, K Matsuura, H Yanagi… - … on Power Electronics, 2016 - ieeexplore.ieee.org
This paper presents circuit design techniques for reducing the effects of magnetic flux,
occurred from the planar transformer, on gallium nitride high-electron-mobility transistors …

Compact Integrated Transformer–Grid Inductor Structure for E-Capless Single-Stage EV Charger

RM Hakim, HP Kieu, J Park… - … on Power Electronics, 2022 - ieeexplore.ieee.org
This article proposes a planar magnetic integration technique that combines the grid
inductors and transformer in the single-stage E-capless electric vehicle charger into one …

A high-frequency resonant gate driver for enhancement-mode GaN power devices

Y Long, W Zhang, D Costinett… - 2015 IEEE Applied …, 2015 - ieeexplore.ieee.org
A novel resonant gate driver designed for the high-frequency enhancement-mode GaN
HEMT power devices is proposed in this work. Simulation results indicate that it reduces …

Impact of transformer stray capacitance on the conduction loss in a GaN-based LLC resonant converter

N Wang, H Jia, M Tian, ZW Li, GZ Xu… - 2017 IEEE 3rd …, 2017 - ieeexplore.ieee.org
Conduction loss, which is greatly affected by transformer stray capacitance, has a huge
influence on the efficiency of LLC resonant converters. The reason is that different …

Five-megahertz PWM-controlled current-mode resonant dc–dc step-down converter using GaN-HEMTs

A Hariya, K Matsuura, H Yanagi… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
High power efficiency and high power density are required in regulated isolated dc-dc
converters. In this paper, a novel pulsewidth modulation (PWM) control method that is …

High efficiency data center power supply using wide band gap power devices

Y Cui, F Xu, W Zhang, B Guo, LM Tolbert… - 2014 IEEE Applied …, 2014 - ieeexplore.ieee.org
The energy efficiency of typical data centers is less than 50% because more than half of the
power is consumed during power conversion, distribution, cooling, etc. In this paper, a …

Direct 400 V to 1 V converter for data center power supplies using GaN FETs

Y Cui, W Zhang, LM Tolbert, F Wang… - 2014 IEEE Applied …, 2014 - ieeexplore.ieee.org
Energy efficiency of typical data centers is less than 50% where more than half of the power
is consumed during power conversion, distribution, cooling, etc. In this paper, a single power …

5MHz PWM-controlled current-mode resonant DC-DC converter using GaN-FETs

A Hariya, H Yanagi, Y Ishizuka… - … 2014-ECCE ASIA), 2014 - ieeexplore.ieee.org
In this paper, the method of the realization of a MHz level switching frequency DC-DC
converter for high power-density is presented. For high power-density, Gallium Nitride field …

5MHz PWM-controlled current-mode resonant DC-DC converter with GaN-FETs

A Hariya, Y Ishizuka, K Matsuura… - 2014 IEEE Applied …, 2014 - ieeexplore.ieee.org
In this paper, a proposed pulse width modulation (PWM) control method for the isolated
current-mode resonant DC-DC converter with MHz level switching frequency is presented …