Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
[HTML][HTML] A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …
devices are under way to realize next-generation power conversion and wireless …
500° C operation of β-Ga2O3 field-effect transistors
We demonstrated 500 C operation of field-effect transistors made using ultra-wide bandgap
semiconductor β-Ga 2 O 3. Metal–semiconductor field-effect transistors were fabricated …
semiconductor β-Ga 2 O 3. Metal–semiconductor field-effect transistors were fabricated …
Overview of wide/ultrawide bandgap power semiconductor devices for distributed energy resources
This article provides an overview of power semiconductor devices (PSDs) for the distributed
energy resource (DER) system. To begin with, an overview of electrically triggered silicon …
energy resource (DER) system. To begin with, an overview of electrically triggered silicon …
[HTML][HTML] Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor
Improvements in radio frequency and power electronics can potentially be realized with
ultrawide bandgap materials such as aluminum gallium nitride (Al x Ga 1− x N) …
ultrawide bandgap materials such as aluminum gallium nitride (Al x Ga 1− x N) …
Simulation Research on Single Event Burnout Performances of p-GaN Gate HEMTs With 2DEG AlxGa1-xN Channel
S Liu, J Zhang, S Zhao, L Shu, X Song… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this article, the single event burnout (SEB) performances for 2DEG Al x channel p-GaN
gate high electron mobility transistors (HEMTs) have been investigated comprehensively to …
gate high electron mobility transistors (HEMTs) have been investigated comprehensively to …
[HTML][HTML] Thermally hardened AlGaN/GaN MIS-HEMTs based on multilayer dielectrics and silicon nitride passivation
AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs)
were demonstrated to operate at temperatures of up to 600 C. High-quality multilayer gate …
were demonstrated to operate at temperatures of up to 600 C. High-quality multilayer gate …
AlN/GaN superlattice channel HEMTs on silicon substrate
S Liu, W Zhang, J Zhang, X Song, Y Wu… - … on Electron Devices, 2021 - ieeexplore.ieee.org
High-electron-mobility transistor (HEMT) with AlN/GaN superlattice (SL) channel has been
demonstrated on a silicon substrate. High OFF-state breakdown voltage V BR of 670 V (gate …
demonstrated on a silicon substrate. High OFF-state breakdown voltage V BR of 670 V (gate …
Chip-last (RDL-first) fan-out panel-level packaging (FOPLP) for heterogeneous integration
JH Lau, CT Ko, CY Peng, KM Yang… - Journal of …, 2020 - meridian.allenpress.com
In this investigation, the chip-last, redistribution-layer (RDL)–first, fan-out panel-level
packaging (FOPLP) for heterogeneous integration is studied. Emphasis is placed on the …
packaging (FOPLP) for heterogeneous integration is studied. Emphasis is placed on the …
Extreme temperature operation of ultra-wide bandgap AlGaN high electron mobility transistors
High Aluminum content channel (Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N) High Electron Mobility
Transistors (HEMTs) were operated from room temperature to 500° C in ambient. The …
Transistors (HEMTs) were operated from room temperature to 500° C in ambient. The …