We present a terahertz (THz) frequency-domain spectroscopic ellipsometer design that
suppresses formation of standing waves by use of stealth technology approaches. The …

The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to
enable superior III-nitride material quality and high performance devices, has been explored …

Compositionally graded channel AlGaN/GaN high electron mobility transistors (HEMTs) offer
a promising route to improve device linearity, which is necessary for low-noise radio …

We present calculations of frequency and wavevector dispersion of conductivity of two-
dimensional electrons confined in AlGaN/GaN heterostructures at the arbitrary level of the …

We report on the study of the magnetic ratchet effect in AlGaN/GaN heterostructures
superimposed with a lateral superlattice formed by a dual-grating gate structure. We …

Electron effective mass is a fundamental material parameter defining the free charge carrier
transport properties, but it is very challenging to be experimentally determined at high …

A complete set of all optical phonon modes predicted by symmetry for bixbyite structure
indium oxide is reported here from a combination of far-infrared and infrared spectroscopic …

Ultra-thin high-Al content barrier layers can enable improved gate control and high-
frequency operation of AlGaN/GaN high electron mobility transistors (HEMTs) but the …

Terahertz time domain spectroscopy (TDS) of the two-dimensional (2-D) electrons in various
commercial AlGaN/GaN heterostructures was performed in the frequency range of 0.1–2.0 …

The paper uses an appropriate survey from rural China to answer the question: is happiness
infectious, ie does the happiness of an individual depend positively on the happiness of his …