Terahertz electronic devices
The frequency band of the electromagnetic spectrum between microwaves and infrared is
nowadays defined as the Terahertz band (1 THz corresponds to 1012 Hz). The development …
nowadays defined as the Terahertz band (1 THz corresponds to 1012 Hz). The development …
On the practical limitations for the generation of Gunn oscillations in highly doped GaN diodes
S García-Sánchez, M Abou Daher… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Planar Gunn diodes based on doped GaN active layers with different geometries have been
fabricated and characterized. Gunn oscillations have not been observed due to the …
fabricated and characterized. Gunn oscillations have not been observed due to the …
Fabrication of AlGaN/GaN fin-type HEMT using a novel T-gate process for improved radio-frequency performance
To increase the radio-frequency (RF) performance of AlGaN/GaN-based fin-type high
electron mobility transistors (HEMTs), a novel T-gate process was developed and applied to …
electron mobility transistors (HEMTs), a novel T-gate process was developed and applied to …
Optimization of the epilayer design for the fabrication of doped GaN planar Gunn diodes
S Garcia-Sanchez, I Iniguez-de-la-Torre… - … on Electron Devices, 2021 - ieeexplore.ieee.org
By means of Monte Carlo simulations of gallium nitride (GaN) planar Gunn diodes, the
epilayer structure on which they are fabricated is optimized in order to achieve ultrahigh …
epilayer structure on which they are fabricated is optimized in order to achieve ultrahigh …
Band-like electron transport in 2D quantum dot periodic lattices: the effect of realistic size distributions
ES Skibinsky-Gitlin, S Rodríguez-Bolívar… - Physical Chemistry …, 2019 - pubs.rsc.org
Electron mobility in nanocrystal films has been a controversial topic in the last few years.
Theoretical and experimental studies evidencing carrier transport by hopping or showing …
Theoretical and experimental studies evidencing carrier transport by hopping or showing …
A Deep Learning-Monte Carlo combined prediction of side-effect impact ionization in highly doped GaN diodes
The existence of leakage current pathways leading to the appearance of impact ionization
and the potential device breakdown in planar Gunn GaN diodes is analyzed by means of a …
and the potential device breakdown in planar Gunn GaN diodes is analyzed by means of a …
Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and …
S García-Sánchez, I Íñiguez-de-la-Torre… - … on Electron Devices, 2024 - ieeexplore.ieee.org
An investigation into self-switching diodes based on highly doped GaN is conducted under
direct current (dc) bias conditions. Different device geometries are explored under various …
direct current (dc) bias conditions. Different device geometries are explored under various …
Intermittency route to chaos and broadband high-frequency generation in semiconductor superlattice coupled to external resonator
AE Hramov, VV Makarov, VA Maximenko… - Physical Review E, 2015 - APS
We investigate the onset of broadband microwave chaos in the miniband semiconductor
superlattice coupled to an external resonator. Our analysis shows that the transition to …
superlattice coupled to an external resonator. Our analysis shows that the transition to …
[HTML][HTML] The wideband tunability of double Gunn diodes
L Butts, S El-Ghazaly - AIP Advances, 2023 - pubs.aip.org
Gunn diodes use the Ridley–Watkins–Hilsum effect to generate low noise millimeter wave
signals for communication and sensing applications. However, Monte Carlo calculations …
signals for communication and sensing applications. However, Monte Carlo calculations …