A systematic spectroscopic study of the carrier transfer between quantum dot (QD) and quantum well (QW) layers is carried out in a hybrid dot-well system based on InAs QDs and …
Photoelectric properties of laterally correlated multilayer InGaAs/GaAs quantum dots (QDs) heterostructures are studied. The response of the photocurrent to increasing excitation …
The interplay between structural properties and charge transfer in self-assembled quantum ring (QR) chains grown by molecular beam epitaxy on top of an InGaAs/GaAs quantum dot …
We study theoretically the evolution of photoluminescence (PL) from homogeneous and inhomogeneous ensembles of a few coupled quantum dots (QDs). We discuss the relation …
The first damage-free top-down fabrication processes for a two-dimensional array of 7 nm GaAs nanodiscs was developed by using ferritin (a protein which includes a 7 nm diameter …
The thermally induced redistribution of carriers between quantum well (QW) and quantum dot (QD) layers in a hybrid dot-well system composed of InAs QDs and an InGaAs QW is …
The optical analysis of multilayer structures formed from the topmost layer of InGaAs/GaAs quantum rings (QRs) grown on a vertically stacked and laterally aligned InGaAs/GaAs …
Change of the photoluminescence (PL) polarization is studied by changing the excitation intensity and temperature for aligned In (Ga) As quantum dot (QD) structures with varying …
We present a theoretical analysis of the intensity correlation functions for the spontaneous emission from a planar ensemble of self-assembled quantum dots. Using the quantum jump …