The group‐III sesquioxides possess material properties that render them interesting for
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …

Amorphous oxide semiconductor transistors have been a mature technology in display
panels for upward of a decade, and have recently been considered as promising back‐end …

We present a theoretical characterization, based on density functional theory, of the indium
tin oxide surface and of the nature of the binding sites that determine the adsorption of …

We report on the phase stabilization of rhombohedral (rh-) In2O3 films on sapphire substrate
deposited by metal organic chemical vapor deposition. With the help of a high-temperature …

We present X-ray diffraction and Raman spectroscopy investigations of (In x Ga 1–x) 2 O 3
thin films and bulk-like ceramics in dependence of their composition. The thin films grown by …

Thin films of In 2 O 3 have been grown on Y-stabilized Zr O 2 (100) by oxygen plasma
assisted molecular beam epitaxy with a substrate temperature of 650 C⁠. Ordered epitaxial …

There is a high demand for compact low-cost ozone sensors. It has been shown recently that
In 2 O 3 nanolayers can act as ozone sensitive films activated at room temperature by …

High quality epitaxial indium oxide (In 2 O 3) films were prepared on the a-plane sapphire
[Al 2 O 3 (110)] substrates at 570–690° C by the metal-organic chemical vapor deposition …

Transparent conducting oxides (TCO) are a critical component of many organic electronic
devices including organic solar cells and light-emitting diodes. In this Perspective, we …

Indium oxide thin films were grown by the pulsed electron beam deposition method on c-cut
sapphire substrates at 10− 2mbar oxygen pressure and temperature up to 500° C. Such …