A review of GaN HEMT broadband power amplifiers
KH Hamza, D Nirmal - AEU-International Journal of Electronics and …, 2020 - Elsevier
The unique material properties of GaN, wide bandgap, high thermal conductivity, high
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …
A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications
Hydrogen (H 2) has been widely used in H 2 fuelled vehicles, semiconductor fabrication,
medical treatments, chemical industry and industrial aerospace applications. However, H 2 …
medical treatments, chemical industry and industrial aerospace applications. However, H 2 …
On the performance of GaN‐on‐silicon, silicon‐carbide, and diamond substrates
A Jarndal, L Arivazhagan… - International Journal of RF …, 2020 - Wiley Online Library
In this article, threading dislocations and its impact on the electrical and thermal
performance of GaN‐on‐Diamond (Dia),‐SiC, and‐Si high electron mobility transistor …
performance of GaN‐on‐Diamond (Dia),‐SiC, and‐Si high electron mobility transistor …
Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD
K Chen, Y Zhang, J Zhang, X Wang, Y Yao, J Ma… - Ceramics …, 2022 - Elsevier
Abstract High-quality AlGaN/GaN/AlN heterostructures with thin GaN channel and thick AlN
buffer layer were grown by metal organic chemical vapor deposition (MOCVD) on SiC …
buffer layer were grown by metal organic chemical vapor deposition (MOCVD) on SiC …
Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications
In this work, a recessed gate AlGaN/AlN/GaN HEMT (high electron mobility transistor) on β-
Ga2O3 substrate is proposed using a field-plate mechanism and compared with a recessed …
Ga2O3 substrate is proposed using a field-plate mechanism and compared with a recessed …
A comprehensive review of AlGaN/GaNHigh electron mobility transistors: Architectures and field plate techniques for high power/high frequency applications
JSR Kumar, HV Du John, IV BinolaKJebalin… - Microelectronics …, 2023 - Elsevier
Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) frequently employs field plate
techniques to improve the device's reliability and optimum performance. This literature …
techniques to improve the device's reliability and optimum performance. This literature …
Simulation modelling of III‐Nitride/β‐Ga2O3 Nano‐HEMT for microwave and millimetre wave applications
In this piece of work, a recessed gate field‐plated AlGaN/AlN/GaN HEMT on β‐Ga2O3
substrate is proposed and its performance characteristics are compared with HEMT structure …
substrate is proposed and its performance characteristics are compared with HEMT structure …
Enhancement of sensitivity in AlGaN/GaN HEMT based sensor using back-barrier technique
In the state of the art, most of the Gallium Nitride (GaN) High Electron Mobility Transistor
(HEMT) based sensors provide current readout rather than voltage readout. Further, to …
(HEMT) based sensors provide current readout rather than voltage readout. Further, to …
Linearity improvement in graded channel AlGaN/GaN HEMTs for high-speed applications
AlGaN HEMTs are popular devices for high-frequency applications. At higher frequencies,
nonlinearity effects are major concerns and need serious attention. In this work, we have …
nonlinearity effects are major concerns and need serious attention. In this work, we have …
Intensive study of field-plated AlGaN/GaN HEMT on silicon substrate for high power RF applications
In this article, we report the RF/DC performance of 250 nm gate length AlGaN/GaN High
Electron Mobility Transistor (HEMT) on a Silicon wafer. The GaN HEMT on Si wafer is …
Electron Mobility Transistor (HEMT) on a Silicon wafer. The GaN HEMT on Si wafer is …