Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors
P Dai, S Wang, H Lu - Micromachines, 2024 - mdpi.com
With the development of high-voltage and high-frequency switching circuits, GaN high-
electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and …
electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and …
E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks
A fully epitaxial ferroelectric ScAlN/AlGaN/GaN HEMT coupled with an ultrathin ScN charge
trap layer for enhancement-mode operation is demonstrated. The ultrathin ScN acts as an …
trap layer for enhancement-mode operation is demonstrated. The ultrathin ScN acts as an …
Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure
X Li, M Wang, H Wang, J Zhang, S You… - … on Electron Devices, 2024 - ieeexplore.ieee.org
Reliability of 100-V p-GaN gate power high-electron-mobility transistors (HEMTs) under
repetitive short-circuit (SC) stress is investigated in this work, which is a vital topic nowadays …
repetitive short-circuit (SC) stress is investigated in this work, which is a vital topic nowadays …
Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate
D Favero, C De Santi, A Nardo, A Dixit… - Applied Physics …, 2024 - iopscience.iop.org
We demonstrate that exposure to positive gate bias can favor a fast recovery of the threshold
voltage variation induced by off-state stress, in p-GaN gate high electron mobility transistors …
voltage variation induced by off-state stress, in p-GaN gate high electron mobility transistors …