Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation
350 nm and 550 nm thick InGaN/GaN bilayers were irradiated with different energies (from∼
82 to∼ 38 MeV) of xenon (129Xe) ions and different fluences of 1.2 GeV lead (208Pb) ions …
82 to∼ 38 MeV) of xenon (129Xe) ions and different fluences of 1.2 GeV lead (208Pb) ions …
Strain engineering of nanowire multi-quantum well demonstrated by raman spectroscopy
M Wölz, M Ramsteiner, VM Kaganer, O Brandt… - Nano …, 2013 - ACS Publications
An analysis of the strain in an axial nanowire superlattice shows that the dominating strain
state can be defined arbitrarily between unstrained and maximum mismatch strain by …
state can be defined arbitrarily between unstrained and maximum mismatch strain by …
Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD
P Chauhan, S Hasenöhrl, E Dobročka… - Journal of Applied …, 2019 - pubs.aip.org
Two I nx A l 1− x N layers were grown simultaneously on different substrates [sapphire
(0001) and the Ga-polar GaN template], but under the same reactor conditions, they were …
(0001) and the Ga-polar GaN template], but under the same reactor conditions, they were …
Nanoscale InN clusters and compositional inhomogeneities in InGaN epitaxial layers quantified by tip-enhanced Raman scattering
We investigate the compositional homogeneity of InGaN thin films with a high In content
grown by migration-enhanced plasma-assisted metal-organic chemical vapor deposition …
grown by migration-enhanced plasma-assisted metal-organic chemical vapor deposition …
Determination of the band gap of indium-rich InGaN by means of photoacoustic spectroscopy
Photoacoustic (PA) measurements have been performed on a series of In x Ga 1− x N thin
films grown with x> 50%. In order to illustrate the usefulness of this technique, these …
films grown with x> 50%. In order to illustrate the usefulness of this technique, these …
Brillouin scattering determination of the surface acoustic wave velocity in InxGa1− xN: A probe into the elastic constants
RJ Jiménez-Riobóo, R Cuscó, R Oliva… - Applied Physics …, 2012 - pubs.aip.org
We have determined the surface acoustic wave velocity in In x Ga 1− x N layers for 0.34< x<
0.75 by means of high resolution Brillouin spectroscopy. The sagittal dependence of the …
0.75 by means of high resolution Brillouin spectroscopy. The sagittal dependence of the …
Analysis of phonon transport through heterointerfaces of InGaN/GaN via Raman imaging using double-laser system: The effect of crystal defects at heterointerface
The pump and probe technique in Raman spectroscopy is used to demonstrate the phonon
transport properties of an In 0.05 Ga 0.95 N/GaN heterostructure. The pump laser generates …
transport properties of an In 0.05 Ga 0.95 N/GaN heterostructure. The pump laser generates …
Investigations on the nanostructures of GaN, InN and InxGa1− xN
C Bagavath, L Nasi, J Kumar - Materials Science in Semiconductor …, 2016 - Elsevier
A controllable approach to the formation of III-nitride nanocrystalline structures using
hydrothermal assisted method is presented. The structural and morphological properties of …
hydrothermal assisted method is presented. The structural and morphological properties of …
Raman study of InxGa1− xN (x= 0.32–0.9) films irradiated with Xe ions at room temperature and 773 K
WS Ai, LM Zhang, W Jiang, JX Peng, L Chen… - Nuclear Instruments and …, 2018 - Elsevier
Abstract Wurtzite In x Ga 1− x N (x= 0.32, 0.47, 0.7, 0.8, and 0.9) films grown on the GaN
epilayers were irradiated with 5 MeV Xe ions to fluences of 3× 10 13 and 6× 10 13 cm− 2 at …
epilayers were irradiated with 5 MeV Xe ions to fluences of 3× 10 13 and 6× 10 13 cm− 2 at …
[HTML][HTML] Probing the large bandgap-bowing and signature of antimony (Sb) in dilute-antimonide III-nitride using micro-Raman scattering
FA Chowdhury, Z Mi - Journal of Applied Physics, 2019 - pubs.aip.org
Dilute-antimonide III-nitrides (Sb< 1%), with their unprecedented and broad range tuning of
bandgap and associated properties, provide extraordinary opportunities for engineering …
bandgap and associated properties, provide extraordinary opportunities for engineering …